CSD18504Q5A 40V N-Channel NexFET Power MOSFET

1 Features

This 5.3mΩ, SON 5mm × 6mm, 40V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	40		V
Q_g	Gate Charge Total (4.5V)	7.7		nC
Q_gd	Gate Charge Gate-to-Drain	2.4		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5V	7.5	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V	5.3	mΩ
V_GS(th)	Threshold Voltage	1.9		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD18504Q5A	2500	13-Inch Reel	SON 5mm × 6mm Plastic Package	Tape and Reel
CSD18504Q5AT	250	7-Inch Reel	SON 5mm × 6mm Plastic Package	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	40	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package limited)	50	A
	Continuous Drain Current (Silicon limited), T_C = 25°C	75
	Continuous Drain Current⁽¹⁾	15
I_DM	Pulsed Drain Current⁽²⁾	275	A
P_D	Power Dissipation⁽¹⁾	3.1	W
P_D	Power Dissipation, T_C = 25°C	77	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 43A, L = 0.1mH, R_G = 25Ω	92	mJ

(1) Typical R_θJA = 40°C/W on a 1-inch² , 2oz. Cu pad on a
0.06-inch thick FR4 PCB.

(2) Max R_θJC = 2.0 °C/W, pulse duration ≤100μs, duty cycle
≤1%

R_DS(on) vs V_GS

Gate Charge