CSD19531KCS 100V N-Channel NexFET Power MOSFET

1 Features

This 100V, 6.4mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	100		V
Q_g	Gate Charge Total (10V)	37		nC
Q_gd	Gate Charge Gate-to-Drain	7.5		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6V	7.3	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10V	6.4	mΩ
V_GS(th)	Threshold Voltage	2.7		V

Device Information⁽¹⁾

DEVICE	PACKAGE	MEDIA	QTY	SHIP
CSD19531KCS	TO-220 Plastic Package	Tube	50	Tube

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	100	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	110
	Continuous Drain Current (Silicon Limited), T_C = 100°C	78
I_DM	Pulsed Drain Current⁽¹⁾	285	A
P_D	Power Dissipation	214	W
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 175	°C
E_AS	Avalanche Energy, Single Pulse I_D = 60A, L = 0.1mH, R_G = 25Ω	180	mJ

(1) Max R_θJC = 0.7° C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.

R_DS(on) vs V_GS

Gate Charge