Data Sheet
CSD19501KCS 80V N-Channel NexFET Power MOSFET
1 Features
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Pb free terminal plating
- RoHS compliant
- Halogen free
- TO-220 plastic package
2 Applications
- Secondary side synchronous rectifier
- Motor control
3 Description
This 80V, 5.5mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 80 | V | |
| Qg | Gate Charge Total (10V) | 38 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 5.8 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 6V | 6.2 | mΩ |
| VGS = 10V | 5.5 | mΩ | ||
| VGS(th) | Threshold Voltage | 2.6 | V | |
Ordering Information(1)
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD19501KCS | TO-220 Plastic Package | Tube | 50 | Tube |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 80 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package limited) | 100 | A |
| Continuous Drain Current (Silicon limited), TC = 25°C | 129 | ||
| Continuous Drain Current (Silicon limited), TC = 100°C | 91 | ||
| IDM | Pulsed Drain Current (1) | 305 | A |
| PD | Power Dissipation | 217 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 175 | °C |
| EAS | Avalanche Energy, single
pulse ID = 65A, L = 0.1mH, RG = 25Ω | 211 | mJ |
(1) Max RθJC = 0.7, pulse duration ≤100μs, Duty cycle ≤1%
RDS(on) vs VGS |
Gate
Charge |
