SLPS481C December   2013  – May 2024 CSD19506KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA80V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 64V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.12.53.2V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 100A2.22.8mΩ
VGS = 10V, ID = 100A2.02.3mΩ
gfsTransconductanceVDS = 8V, ID = 100A297S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 40V, ƒ = 1MHz938012200pF
CossOutput Capacitance22602940pF
CrssReverse Transfer Capacitance4255pF
RGSeries Gate Resistance1.32.6
QgGate Charge Total (10V)VDS = 40V, ID = 100A120156nC
QgdGate Charge Gate to Drain20nC
QgsGate Charge Gate to Source37nC
Qg(th)Gate Charge at Vth25nC
QossOutput ChargeVDS = 40V, VGS = 0V345nC
td(on)Turn On Delay TimeVDS = 40V, VGS = 10V,
IDS = 100A, RG = 0Ω
19ns
trRise Time11ns
td(off)Turn Off Delay Time30ns
tfFall Time10ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.91.1V
QrrReverse Recovery ChargeVDS= 40V, IF = 100A,
di/dt = 300A/μs
525nC
trrReverse Recovery Time107ns