SLPS481C December 2013 – May 2024 CSD19506KCS
PRODUCTION DATA
This 80V, 2.0mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 80 | V | |
Qg | Gate Charge Total (10V) | 120 | nC | |
Qgd | Gate Charge Gate to Drain | 20 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6V | 2.2 | mΩ |
VGS = 10V | 2.0 | mΩ | ||
VGS(th) | Threshold Voltage | 2.5 | V |
Device | Package(1) | Media | Qty | Ship |
---|---|---|---|---|
CSD19506KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 80 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 150 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 273 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 193 | ||
IDM | Pulsed Drain Current (1) | 400 | A |
PD | Power Dissipation | 375 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 175 | °C |
EAS | Avalanche Energy, single pulse ID = 129A, L = 0.1mH, RG = 25Ω |
832 | mJ |