SLPS485C January   2014  – May 2024 CSD19536KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19536KCS CSD19536KCS
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 118 nC
Qgd Gate Charge Gate to Drain 17 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6V 2.5 mΩ
VGS = 10V 2.3 mΩ
VGS(th) Threshold Voltage 2.5 V
Ordering Information
Device Package Media Qty Ship
CSD19536KCS TO-220 Plastic Package Tube 50 Tube
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 150 A
Continuous Drain Current (Silicon limited), TC = 25°C 259
Continuous Drain Current (Silicon limited), TC = 100°C 183
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 127A, L = 0.1mH, RG = 25Ω		 806 mJ
(1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD19536KCS RDS(on) vs VGS RDS(on) vs VGS
CSD19536KCS Gate Charge Gate Charge