SLPS521A December   2014  – May 2024 CSD85301Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 PCB Land Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q2 Tape and Reel Information

3 Description

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

CSD85301Q2 Top View and Circuit Image Top View and Circuit Image
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 20 V
Qg Gate Charge Total (4.5V) 4.2 nC
Qgd Gate Charge Gate to Drain 1.0 nC
RDS(on) Drain-to-Source On Resistance VGS = 1.8V 65 mΩ
VGS = 2.5V 33 mΩ
VGS = 3.8V 25 mΩ
VGS = 4.5V 23 mΩ
VGS(th) Threshold Voltage 0.9 V
Ordering Information
Device(1) Media Qty Package Ship
CSD85301Q2 7-Inch Reel 3000 SON 2mm x 2mm
Plastic Package		 Tape and Reel
CSD85301Q2T 7-Inch Reel 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage ±10 V
ID Continuous Drain Current (Package limited) 5.0 A
IDM Pulsed Drain Current(1) 26 A
PD Power Dissipation(2) 2.3 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 8.7A, L = 0.1mH, RG = 25Ω		 3.8 mJ
(1) Max RθJA = 185 °C/W, pulse duration ≤100μs, duty cycle ≤1%.
(2) Typical RθJA = 55 °C/W on a 1 inch2, 2oz. Cu pad on a 0.06 inch thick FR4 PCB.
CSD85301Q2 RDS(on) vs VGSRDS(on) vs VGS
CSD85301Q2 Gate ChargeGate Charge