Data Sheet
CSD19538Q2 100V N-Channel NexFET™ Power MOSFET
1 Features
- Ultra-low Qg and Qgd
- Low-thermal resistance
- Avalanche rated
- Lead free
- RoHS compliant
- Halogen free
- SON 2mm × 2mm plastic package
2 Applications
- Power over ethernet (PoE)
- Power sourcing equipment (PSE)
- Motor control
Abstract
This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Figure 3-1 Top ViewProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V | |
| Qg | Gate Charge Total (10V) | 4.3 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.8 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 6V | 58 | mΩ |
| VGS = 10V | 49 | |||
| VGS(th) | Threshold Voltage | 3.2 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD19538Q2 | 3000 | 7 Inch Reel | SON 2.00mm x 2.00mm Plastic Package | Tape and Reel |
| CSD19538Q2T | 250 | |||
| CSD19538Q2R | 10,000 | 13 Inch Reel |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package Limited) | 14.4 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 13.1 | ||
| Continuous Drain Current(1) | 4.6 | ||
| IDM | Pulsed Drain Current(2) | 34.4 | A |
| PD | Power Dissipation(1) | 2.5 | W |
| Power Dissipation, TC = 25°C | 20.2 | ||
| TJ, Tstg | Operating Junction Temperature, Storage Temperature | –55 to 150 | °C |
| EAS | Avalanche Energy, Single
Pulse ID = 12.6A, L = 0.1mH, RG = 25Ω | 8 | mJ |
(1) Typical RθJA = 50°C/W on a 1 inch2, 2oz Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max RθJC = 6.2°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate
Charge |
