SLPS582B July   2016  – March 2024 CSD19538Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

3.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICMINTYPMAXUNIT
RθJCJunction-to-case thermal resistance(1)6.2°C/W
RθJAJunction-to-ambient thermal resistance(1)(2)65°C/W
(1) RθJC is determined with the device mounted on a 1in2 (6.45cm2), 2oz (0.071mm) thick Cu pad on a 1.5in × 1.5in (3.81cm × 3.81cm), 0.06in (1.52mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1in2 (6.45cm2), 2oz (0.071mm) thick Cu.

CSD19538Q2
Max RθJA = 65°C/W when mounted on 1in2 (6.45cm2) of 2oz (0.071mm) thick Cu.
CSD19538Q2
Max RθJA = 250°C/W when mounted on a minimum pad area of 2oz (0.071mm) thick Cu.