SLPS582B July   2016  – March 2024 CSD19538Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

Abstract

This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19538Q2 Top View Figure 3-1 Top View
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 4.3 nC
Qgd Gate Charge Gate-to-Drain 0.8 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 58 mΩ
VGS = 10V 49
VGS(th) Threshold Voltage 3.2 V
Device Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD19538Q230007 Inch ReelSON
2.00mm x 2.00mm
Plastic Package		Tape and Reel
CSD19538Q2T250
CSD19538Q2R 10,000 13 Inch Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage100V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package Limited)14.4A
Continuous Drain Current (Silicon Limited), TC = 25°C13.1
Continuous Drain Current(1)4.6
IDMPulsed Drain Current(2)34.4A
PDPower Dissipation(1)2.5W
Power Dissipation, TC = 25°C20.2
TJ,
Tstg		Operating Junction Temperature,
Storage Temperature		–55 to 150°C
EASAvalanche Energy, Single Pulse
ID = 12.6A, L = 0.1mH, RG = 25Ω		8mJ
(1) Typical RθJA = 50°C/W on a 1 inch2, 2oz Cu pad on a 0.06 inch thick FR4 PCB.
(2) Max RθJC = 6.2°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
CSD19538Q2 RDS(on) vs VGS RDS(on) vs VGS
CSD19538Q2 Gate Charge Gate Charge