SLPS582B July   2016  – March 2024 CSD19538Q2

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

3.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD19538Q2 Transient Thermal Impedance
Figure 3-1 Transient Thermal Impedance
CSD19538Q2 Saturation Characteristics
Figure 3-2 Saturation Characteristics
CSD19538Q2 Gate Charge
ID = 5AVDS = 50V
Figure 3-4 Gate Charge
CSD19538Q2 Threshold Voltage vs Temperature
ID = 250µA
Figure 3-6 Threshold Voltage vs Temperature
CSD19538Q2 Normalized On-State Resistance vs Temperature
ID = 5A
Figure 3-8 Normalized On-State Resistance vs Temperature
CSD19538Q2 Maximum Safe Operating Area
Single pulse, max RθJC = 6.2°C/W
Figure 3-10 Maximum Safe Operating Area
CSD19538Q2 Maximum Drain Current vs Temperature
Figure 3-12 Maximum Drain Current vs Temperature
CSD19538Q2 Transfer Characteristics
VDS = 5V
Figure 3-3 Transfer Characteristics
CSD19538Q2 Capacitance
Figure 3-5 Capacitance
CSD19538Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 3-7 On-State Resistance vs Gate-to-Source Voltage
CSD19538Q2 Typical Diode Forward Voltage
Figure 3-9 Typical Diode Forward Voltage
CSD19538Q2 Single Pulse Unclamped Inductive Switching
Figure 3-11 Single Pulse Unclamped Inductive Switching