SLUS157Q December 1999 – October 2019 UCC1895 , UCC2895 , UCC3895
PRODUCTION DATA.
In this design to meet efficiency and voltage requirements 20 A, 650 V, CoolMOS FETs from Infineon are chosen for QA..QD.
FET drain to source on resistance:
FET Specified COSS:
Voltage across drain-to-source (VdsQA) where COSS was measured, data sheet parameter:
Calculate average Coss [2]:
QA FET gate charge:
Voltage applied to FET gate to activate FET:
Calculate QA losses (PQA) based on Rds(on)QA and gate charge (QAg):
Recalculate power budget: