SLUS678D
March 2008 – November 2023
UCC27324-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Overall Electrical Characteristics
5.6
Power Dissipation Characteristics
5.7
Input (INA, INB) Electrical Characteristics
5.8
Output (OUTA, OUTB) Electrical Characteristics
5.9
Switching Characteristics
5.10
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Input Stage
6.3.2
Output Stage
6.4
Device Functional Modes
7
Application and Implementation
7.1
Application Information
7.1.1
Parallel Outputs
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.2.1
Propagation Delay
7.2.2.2
Source and Sink Capabilities During Miller Plateau
7.2.2.3
Supply Voltage (VDD)
7.2.2.4
Drive Current and Power Requirements
7.2.3
Application Curve
8
Power Supply Recommendations
9
Layout
9.1
Layout Guidelines
9.2
Layout Example
9.3
Thermal Considerations
10
Device and Documentation Support
10.1
Third-Party Products Disclaimer
10.2
Documentation Support
10.2.1
Related Documentation
10.3
Receiving Notification of Documentation Updates
10.4
Support Resources
10.5
Trademarks
10.6
Electrostatic Discharge Caution
10.7
Glossary
11
Revision History
12
Mechanical, Packaging, and Orderable Information
1
Features
Qualified for Automotive Applications
Industry-Standard Pinout
High Current Drive Capability of ±4 A at the Miller Plateau Region
Efficient Constant Current Sourcing Even at Low Supply Voltages
TTL and CMOS-Compatible Inputs Independent of Supply Voltage
20-ns Typical Rise and 15-ns Typical Fall Times with 1.8-nF Load
Typical Propagation Delay Times of 25 ns With Input Falling and 35 ns With Input Rising
Supply Voltage of 4 V to 15 V
Supply Current of 0.3 mA
Dual Outputs Can Be Paralleled for Higher Drive Current
Rated From T
J
= –40°C to 125°C
TrueDrive™
Output Architecture Using Bipolar and CMOS Transistors in Parallel