SLUS696C June   2006  – February 2019 BQ26100

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Standard Serial Communication (SDQ) Timing
    7. 6.7 OTP Programming Specifications
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Non-Volatile Memory
      2. 7.3.2 Authentication
      3. 7.3.3 Communication and Power
    4. 7.4 Device Functional Modes
      1. 7.4.1 Profile Command
      2. 7.4.2 Sleep Mode Description
    5. 7.5 Programming
      1. 7.5.1 Communicating with the bq26100 Device
      2. 7.5.2 Memory Descriptions
        1. 7.5.2.1 Non-Volatile OTP Memory
          1. 7.5.2.1.1 General Use – Memory Function Commands 0xF0 (Read) and 0x0F (Write)
          2. 7.5.2.1.2 General Use — Memory Function Commands 0xFA (Read) and 0xAF (Write)
          3. 7.5.2.1.3 Status – Memory Function Commands 0xAA (Read) and 0x55 (Write)
            1. 7.5.2.1.3.1 PAGE LOCK (offset = D431h) [reset = 0h]
              1. Table 5. PAGE LOCK Field Descriptions
        2. 7.5.2.2 Non-Volatile EEPROM Memory
          1. 7.5.2.2.1 General Use – Memory Function Commands 0xE0 (Read) and 0x0E (Write)
      3. 7.5.3 SHA-1 Description
      4. 7.5.4 Key Programming Description
    6. 7.6 Register Maps
      1. 7.6.1 Volatile Register Memory
        1. 7.6.1.1 Message and Digest Registers – Memory Function Command 0xDD (Read) and 0x22 (Write)
        2. 7.6.1.2 Control and Version Registers – Memory Function Command 0x88 (Read) and 0x77 (Write)
          1. 7.6.1.2.1 CTRL Register (address = 0001h) [reset = 1h]
            1. Table 9. Control Register Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

all parameters over operating free-air temperature and supply voltage range (unless otherwise noted) (memory programming and authentication were tested with R1 = 4.7 kΩ, C1 = 0.1 μF over pullup voltage range)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Power up communication delay Power capacitor charge time 100 ms
Isleep Sleep current 8 11 μA
Isdq(Vsdq) Vsdq Current Vsdq ≥ Vsdq(min) 50 μA
OTP Memory programming voltage 6.8 7 7.7 V
OTP Memory programming time 100 μs/byte
EEPROM Programming current (peak current) 83 μA
EEPROM Peak current duration 100 μs
EEPROM Programming time 50 ms
SDQ
VIL Input low-level voltage 0.63 V
IOL Output low sink current VOL = 0.4 V 1 mA