SLUS696C June   2006  – February 2019 BQ26100

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Standard Serial Communication (SDQ) Timing
    7. 6.7 OTP Programming Specifications
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Non-Volatile Memory
      2. 7.3.2 Authentication
      3. 7.3.3 Communication and Power
    4. 7.4 Device Functional Modes
      1. 7.4.1 Profile Command
      2. 7.4.2 Sleep Mode Description
    5. 7.5 Programming
      1. 7.5.1 Communicating with the bq26100 Device
      2. 7.5.2 Memory Descriptions
        1. 7.5.2.1 Non-Volatile OTP Memory
          1. 7.5.2.1.1 General Use – Memory Function Commands 0xF0 (Read) and 0x0F (Write)
          2. 7.5.2.1.2 General Use — Memory Function Commands 0xFA (Read) and 0xAF (Write)
          3. 7.5.2.1.3 Status – Memory Function Commands 0xAA (Read) and 0x55 (Write)
            1. 7.5.2.1.3.1 PAGE LOCK (offset = D431h) [reset = 0h]
              1. Table 5. PAGE LOCK Field Descriptions
        2. 7.5.2.2 Non-Volatile EEPROM Memory
          1. 7.5.2.2.1 General Use – Memory Function Commands 0xE0 (Read) and 0x0E (Write)
      3. 7.5.3 SHA-1 Description
      4. 7.5.4 Key Programming Description
    6. 7.6 Register Maps
      1. 7.6.1 Volatile Register Memory
        1. 7.6.1.1 Message and Digest Registers – Memory Function Command 0xDD (Read) and 0x22 (Write)
        2. 7.6.1.2 Control and Version Registers – Memory Function Command 0x88 (Read) and 0x77 (Write)
          1. 7.6.1.2.1 CTRL Register (address = 0001h) [reset = 1h]
            1. Table 9. Control Register Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

7.3.1 Non-Volatile Memory

The bq26100 device has a bq2022 compatible memory and command structure with new commands to access added memory. The bq26100 device uses a combination of non-volatile OTP and non-volatile EEPROM. The OTP should be programmed in the factory as an external voltage is required to program the bits; the EEPROM can be programmed in the field, with the programming voltage generated automatically by an internal-charge pump.

Four pages of 32x8-bits OTP are accessed with the bq2022 compatible command set, while a fifth page of 32x8-bits are accessed with a new command set. Each page of OTP can be locked once programmed, blocking further writes to the page. There is an additional provision to allow for page redirection at the host in the event that a page is programmed incorrectly. The redirection is not automatic, but a host system can determine where a page redirection is occurring and read the appropriate page for uncorrupted data.

The EEPROM consists of 16x8-bits that can be written in the same way as for RAM-based volatile memory. The timing of the writes is different than writing to RAM to allow for the internal charge pump to create the voltage necessary to set the bit values.