4 Revision History
Changes from C Revision (November 2016) to D Revision
- Added "keep total REFOUT capacitance below 0.47 μF" in Pin Functions table Go
Changes from B Revision (September 2016) to C Revision
- Added references to DDR3L DRAM technology throughoutGo
- Added DDR3L test conditions to Output DC voltage, VO and REFOUT specificationGo
- Added Figure 4Go
- Added Figure 9Go
- Updated Figure 16 to include DDR3L dataGo
Changes from A Revision (September 2015) to B Revision
- Changed " –10 mA < IREFOUT < 10 mA" to "–1 mA < IREFOUT < 1 mA" in all test conditions for the REFOUT voltage tolerance to VREFIN specificationGo
- Changed all MIN and MAX values from "15" to "12" for all test conditions for the REFOUT voltage tolerance to VREFIN specificationGo
- Updated Figure 19Go
- Added REFOUT (VREF) Consideration for DDR2 Applications sectionGo
- Updated Figure 28 and Table 3Go
- Added clarity to Layout Guidelines section.Go
Changes from * Revision (February 2008) to A Revision
- Added Pin Configuration and Functions section, ESD Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section.Go
- Changed “PowerPAD” references to “thermal pad” throughoutGo
- Deleted Dissipation Ratings table Go