SLUSAM9E July   2011  – April 2020 BQ76925

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: Supply Current
    6. 7.6  Internal Power Control (Startup and Shutdown)
    7. 7.7  3.3-V Voltage Regulator
    8. 7.8  Voltage Reference
    9. 7.9  Cell Voltage Amplifier
    10. 7.10 Current Sense Amplifier
    11. 7.11 Overcurrent Comparator
    12. 7.12 Internal Temperature Measurement
    13. 7.13 Cell Balancing and Open Cell Detection
    14. 7.14 I2C Compatible Interface
    15. 7.15 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Internal LDO Voltage Regulator
      2. 8.3.2 ADC Interface
        1. 8.3.2.1 Reference Voltage
          1. 8.3.2.1.1 Host ADC Calibration
        2. 8.3.2.2 Cell Voltage Monitoring
          1. 8.3.2.2.1 Cell Amplifier Headroom Under Extreme Cell Imbalance
          2. 8.3.2.2.2 Cell Amplifier Headroom Under BAT Voltage Drop
        3. 8.3.2.3 Current Monitoring
        4. 8.3.2.4 Overcurrent Monitoring
        5. 8.3.2.5 Temperature Monitoring
          1. 8.3.2.5.1 Internal Temperature Monitoring
      3. 8.3.3 Cell Balancing and Open Cell Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Modes
        1. 8.4.1.1 POWER ON RESET (POR)
        2. 8.4.1.2 STANDBY
        3. 8.4.1.3 SLEEP
    5. 8.5 Programming
      1. 8.5.1 Host Interface
        1. 8.5.1.1 I2C Addressing
        2. 8.5.1.2 Bus Write Command to BQ76925
        3. 8.5.1.3 Bus Read Command from BQ76925 Device
    6. 8.6 Register Maps
      1. 8.6.1 Register Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended System Implementation
        1. 9.1.1.1 Voltage, Current, and Temperature Outputs
        2. 9.1.1.2 Power Management
        3. 9.1.1.3 Low Dropout (LDO) Regulator
        4. 9.1.1.4 Input Filters
        5. 9.1.1.5 Output Filters
      2. 9.1.2 Cell Balancing
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7.7 3.3-V Voltage Regulator

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VCTL Regulator control voltage (1)(2) Measured at VCTL, V3P3 regulating 3.3 26.4 V
VV3P3 Regulator output Measured at V3P3, IREG = 0 to 4 mA,
BAT = 4.2 to 26.4 V		 3.2 3.3 3.4 V
IREG V3P3 output current 4 mA
ISC V3P3 short circuit current limit V3P3 = 0.0 V 10 17 mA
VTB Thermistor bias voltage Measured at VTB, ITB = 0 VV3P3 V
ITB Thermistor bias current 1 mA
RTB Thermistor bias internal resistance RDS(ON) for internal FET switch, ITB = 1 mA 90 130 Ω
(1) When a bypass FET is used to supply the regulated 3.3 V load current, VCTL automatically adjusts to keep V3P3 = 3.3 V. Note that VCTL,MIN and the FET VGS will determine the minimum BAT voltage at which the bypass FET will operate.
(2) If VCTL is tied to BAT, the load current is supplied through V3P3.