All voltages are with respect to GND, −40 °C < TJ =
TA < 125 °C, currents are positive into and negative out of
the specified terminal, unless otherwise noted.
|
MIN |
MAX |
UNIT |
|
Continuous input voltage range |
VCC(1) |
−0.5 |
21 |
V |
PWMCNTL |
−0.5 |
20 |
COMP(2), PHB, HVSEN(3), VINAC(3), VSENSE(3) |
–0.5 |
7 |
ZCDA, ZCDB |
–0.5 |
4 |
CS(4) |
–0.5 |
3 |
GDA, GDB(5) |
–0.5 |
VCC+0.3 |
|
Continuous input current |
VCC |
|
20 |
mA |
PWMCNTL |
|
10 |
ZCDA, ZCDB |
|
±5 |
|
Peak input
current |
CS |
|
–30 |
|
Output
current |
VREF |
|
–10 |
|
Continuous gate
current |
GDA, GDB(5) |
|
±25 |
TJ |
Junction
Temperature |
Operating |
–40 |
125 |
°C |
Storage |
–65 |
150 |
TSOL |
Lead
Temperature |
Soldering, 10s |
|
260 |
Tstg |
Storage temperature |
–40 |
125 |
(1) Voltage on VCC is internally clamped. VCC may exceed the
continuous absolute maximum input voltage rating if the source is current
limited below the absolute maximum continuous VCC input current level.
(2) In normal use, COMP is connected to capacitors and resistors
and is internally limited in voltage swing.
(3) In normal use, VINAC, VSENSE, and HVSEN are connected to
high-value resistors and are internally limited in negative-voltage swing.
Although not recommended for extended use, VINAC, VSENSE, and HVSEN can survive
input currents as high as -10mA from negative voltage sources, and input
currents as high as +0.5mA from positive voltage sources.
(4) In normal use, CS is connected to a series resistor to limit
peak input current during brief system line-inrush conditions. In these
situations, negative voltage on CS may exceed the continuous absolute maximum
rating.
(5) No GDA or GDB current limiting is required when driving a power
MOSFET gate. However, a small series resistor may be required to damp resonant
ringing due to stray inductance.