UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features

• Enhancement Mode Gallium Nitride FETs (eGANFETs)
• 4-V to 18-V Single Supply Range VDD Range
• Drive Voltage VREF Regulated to 5 V
• 4-A Peak Source and 6-A Peak Sink Drive Current
• 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity)
• Split Output Configuration (Allows Turnon and Turnoff Optimization for Individual FETs)
• Fast Propagation Delays (14-ns Typical)
• Fast Rise and Fall Times (9-ns and 5-ns Typical)
• TTL and CMOS Compatible Inputs (Independent of Supply Voltage Allow Easy Interface-to-Digital and Analog Controllers)
• Dual-Input Design Offering Drive Flexibility (Both Inverting and Noninverting Configurations)
• Output Held Low When Inputs Are Floating
• VDD Under Voltage Lockout (UVLO)
• Optimized Pinout Compatible With eGANFET Footprint for Easy Layout
• 2.00 mm × 2.00 mm SON-6 Package With Exposed Thermal and Ground Pad, (Minimized Parasitic Inductances to Reduce Gate Ringing)
• Operating Temperature Range of –40°C to 140°C