SLUSBU9I March   2014  – August 2024 BQ2970 , BQ2971 , BQ2972 , BQ2973

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Descriptions
      1. 5.1.1 Supply Input: BAT
      2. 5.1.2 Cell Negative Connection: VSS
      3. 5.1.3 Voltage Sense Node: V–
      4. 5.1.4 Discharge FET Gate Drive Output: DOUT
      5. 5.1.5 Charge FET Gate Drive Output: COUT
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Characteristics
    6. 6.6 Programmable Fault Detection Thresholds
    7. 6.7 Programmable Fault Detection Timer Ranges
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Timing Charts
    2. 7.2 Test Circuits
    3. 7.3 Test Circuit Diagrams
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Overcharge Status
      3. 8.4.3 Over-Discharge Status
      4. 8.4.4 Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit)
      5. 8.4.5 Charge Overcurrent Status
      6. 8.4.6 0V Charging Function Enabled
      7. 8.4.7 0V Charging Inhibit Function
      8. 8.4.8 Delay Circuit
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Performance Plots
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Documentation
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

10.4 Electrostatic Discharge Caution

BQ2970 BQ2971 BQ2972 BQ2973 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.