SLUSBU9I March   2014  – August 2024 BQ2970 , BQ2971 , BQ2972 , BQ2973

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Descriptions
      1. 5.1.1 Supply Input: BAT
      2. 5.1.2 Cell Negative Connection: VSS
      3. 5.1.3 Voltage Sense Node: V–
      4. 5.1.4 Discharge FET Gate Drive Output: DOUT
      5. 5.1.5 Charge FET Gate Drive Output: COUT
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Characteristics
    6. 6.6 Programmable Fault Detection Thresholds
    7. 6.7 Programmable Fault Detection Timer Ranges
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Timing Charts
    2. 7.2 Test Circuits
    3. 7.3 Test Circuit Diagrams
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Overcharge Status
      3. 8.4.3 Over-Discharge Status
      4. 8.4.4 Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit)
      5. 8.4.5 Charge Overcurrent Status
      6. 8.4.6 0V Charging Function Enabled
      7. 8.4.7 0V Charging Inhibit Function
      8. 8.4.8 Delay Circuit
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Performance Plots
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Documentation
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.6 Programmable Fault Detection Thresholds

PARAMETERCONDITIONMINTYPMAXUNIT
VOVPOvercharge detection voltageFactory Device Configuration: 3.85V to 4.60V in 50mV stepsTA = 25°C–1010mV
TA = 0°C to 60°C–2020mV
VOVP–HysOvercharge release hysteresis voltage100mV and (VSS – V–) > OCC (min) for release, TA = 25°C–2020mV
VUVPOver-discharge detection voltageFactory Device Configuration: 2.00V to 2.80V in 50mV steps, TA = 25°C–5050mV
VUVP+HysOver-discharge release hysteresis voltage100mV and (BAT – V–) > 1V for release, TA = 25°C–5050mV
VOCDDischarging overcurrent detection voltageFactory Device Configuration: 90mV to 200mV in 5mV stepsTA = 25°C–1010mV
TA = –40°C to 85°C–1515mV
Release of VOCDRelease of discharging overcurrent detection voltageRelease when BAT – V– > 1V1V
VOCCCharging overcurrent detection voltageFactory Device Configuration: –45mV to –155mV in 5mV stepsTA = 25°C–1010mV
TA = –40°C to 85°C–1515mV
Release of VOCCRelease of overcurrent detection voltageRelease when VSS – V– ≥ OCC (min)40mV
VSCCShort Circuit detection voltageFactory Device Configuration: 300mV, 400mV, 500mV, 600mVTA = 25°C–100100mV
VSCCRRelease of Short Circuit detection voltageRelease when BAT – V– ≥ 1V1V