SLUSBW3D March   2014  – December 2017 UCC28630 , UCC28631 , UCC28632 , UCC28633 , UCC28634

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Typical Application Measured Regulation
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     PIN Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information (UCC28630, UCC28631)
    5. 7.5 Thermal Information (UCC28632, UCC28633, (UCC28630, UCC28634)
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  High-Voltage Current Source Start-Up Operation
      2. 8.3.2  AC Input UVLO / Brownout Protection
      3. 8.3.3  Active X-Capacitor Discharge (UCC28630 and UCC28633 only)
        1. 8.3.3.1 Improved Performance with UCC28630 and UCC28633
      4. 8.3.4  Magnetic Input and Output Voltage Sensing
      5. 8.3.5  Fixed-Point Magnetic Sense Sampling Error Sources
      6. 8.3.6  Magnetic Sense Resistor Network Calculations
        1. 8.3.6.1 Step 1
        2. 8.3.6.2 Step 2
        3. 8.3.6.3 Step 3
        4. 8.3.6.4 Step 4
      7. 8.3.7  Magnetic Sensing: Power Stage Design Constraints
      8. 8.3.8  Magnetic Sense Voltage Control Loop
      9. 8.3.9  Peak Current Mode Control
      10. 8.3.10 IPEAK Adjust vs. Line
      11. 8.3.11 Primary-Side Constant-Current Limit (CC Mode)
      12. 8.3.12 Primary-Side Overload Timer (UCC28630 only)
      13. 8.3.13 Overload Timer Adjustment (UCC28630 only)
      14. 8.3.14 CC-Mode IOUT(lim) Adjustment
      15. 8.3.15 Fault Protections
      16. 8.3.16 Pin-Fault Detection and Protection
      17. 8.3.17 Over-Temperature Protection
      18. 8.3.18 External Fault Input
      19. 8.3.19 External SD Pin Wake Input (except UCC28633)
      20. 8.3.20 External Wake Input at VSENSE Pin (UCC28633 Only)
      21. 8.3.21 Mode Control and Switching Frequency Modulation
      22. 8.3.22 Frequency Dither For EMI (except UCC28632)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Internal Key Parameters
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Notebook Adapter, 19.5 V, 65 W
      2. 9.2.2 UCC28630 Application Schematic
      3. 9.2.3 Design Requirements
      4. 9.2.4 Detailed Design Procedure
        1. 9.2.4.1  Custom Design With WEBENCH® Tools
        2. 9.2.4.2  Input Bulk Capacitance and Minimum Bulk Voltage
        3. 9.2.4.3  Transformer Turn Ratio
        4. 9.2.4.4  Transformer Magnetizing Inductance
        5. 9.2.4.5  Current Sense Resistor RCS
        6. 9.2.4.6  Transformer Constraint Verification
        7. 9.2.4.7  Transformer Selection and Design
        8. 9.2.4.8  Slope Compensation Verification
        9. 9.2.4.9  Power MOSFET and Output Rectifier Selection
        10. 9.2.4.10 Output Capacitor Selection
        11. 9.2.4.11 Calculation of CC Mode Limit Point
        12. 9.2.4.12 VDD Capacitor Selection
        13. 9.2.4.13 Magnetic Sense Resistor Network Selection
        14. 9.2.4.14 Output LED Pre-Load Resistor Calculation
      5. 9.2.5 External Wake Pulse Calculation at VSENSE Pin (UCC28633 Only)
      6. 9.2.6 Energy Star Average Efficiency and Standby Power
      7. 9.2.7 Application Performance Plots
    3. 9.3 Dos and Don'ts
      1. 9.3.1 Test and Debug Recommendations
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 HV Pin
      2. 11.1.2 VDD Pin
      3. 11.1.3 VSENSE Pin
      4. 11.1.4 CS Pin
      5. 11.1.5 SD Pin
      6. 11.1.6 DRV Pin
      7. 11.1.7 GND Pin
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
        1. 12.2.1.1 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

9.2.4.13 Magnetic Sense Resistor Network Selection

The required values for the magnetic sense divider network are calculated from Equation 11 and Equation 12. For the RM10/I transformer used in the PWR572 EVM, the secondary-side to bias leakage inductance was measured and found to be approximately 4%. This figure can be reasonably estimated as the ratio of the inductance value measured across the secondary-side pins with the bias pins shorted together (primary winding should remain open-circuit), to the inductance value measured across the secondary-side pins with all other windings open:

Equation 61. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu62_lusbw3.gif

RA is calculated as shown in Equation 62.

Equation 62. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu63_lusbw3.gif

The nearest standard E96 value 22.6 kΩ is selected. RB may then be calculated to set VOUT at 19.5 V.

Equation 63. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu64_lusbw3.gif

The nearest E96 value is 32.4 kΩ, which could be used, but results in some set-point regulation error. As shown in Figure 44, the setpoint may be fine-tuned by using two parallel resistors for RB. In this case use values of 39 kΩ and 180 kΩ, to give a net equivalent of 32.05 kΩ, very close to the target value in Equation 63.

Note that the pull-up diode to DRV pin should be a standard switching signal diode such as BAS21 or similar. The reverse recovery of the diode should be 100 ns or less. A slow-recovery diode clamps the VSENSE pin low for an initial portion of the flyback interval, and may impair or prevent the ability to take a valid output voltage sample.