SLUSBW3D March   2014  – December 2017 UCC28630 , UCC28631 , UCC28632 , UCC28633 , UCC28634

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Typical Application Measured Regulation
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     PIN Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information (UCC28630, UCC28631)
    5. 7.5 Thermal Information (UCC28632, UCC28633, (UCC28630, UCC28634)
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  High-Voltage Current Source Start-Up Operation
      2. 8.3.2  AC Input UVLO / Brownout Protection
      3. 8.3.3  Active X-Capacitor Discharge (UCC28630 and UCC28633 only)
        1. 8.3.3.1 Improved Performance with UCC28630 and UCC28633
      4. 8.3.4  Magnetic Input and Output Voltage Sensing
      5. 8.3.5  Fixed-Point Magnetic Sense Sampling Error Sources
      6. 8.3.6  Magnetic Sense Resistor Network Calculations
        1. 8.3.6.1 Step 1
        2. 8.3.6.2 Step 2
        3. 8.3.6.3 Step 3
        4. 8.3.6.4 Step 4
      7. 8.3.7  Magnetic Sensing: Power Stage Design Constraints
      8. 8.3.8  Magnetic Sense Voltage Control Loop
      9. 8.3.9  Peak Current Mode Control
      10. 8.3.10 IPEAK Adjust vs. Line
      11. 8.3.11 Primary-Side Constant-Current Limit (CC Mode)
      12. 8.3.12 Primary-Side Overload Timer (UCC28630 only)
      13. 8.3.13 Overload Timer Adjustment (UCC28630 only)
      14. 8.3.14 CC-Mode IOUT(lim) Adjustment
      15. 8.3.15 Fault Protections
      16. 8.3.16 Pin-Fault Detection and Protection
      17. 8.3.17 Over-Temperature Protection
      18. 8.3.18 External Fault Input
      19. 8.3.19 External SD Pin Wake Input (except UCC28633)
      20. 8.3.20 External Wake Input at VSENSE Pin (UCC28633 Only)
      21. 8.3.21 Mode Control and Switching Frequency Modulation
      22. 8.3.22 Frequency Dither For EMI (except UCC28632)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Internal Key Parameters
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Notebook Adapter, 19.5 V, 65 W
      2. 9.2.2 UCC28630 Application Schematic
      3. 9.2.3 Design Requirements
      4. 9.2.4 Detailed Design Procedure
        1. 9.2.4.1  Custom Design With WEBENCH® Tools
        2. 9.2.4.2  Input Bulk Capacitance and Minimum Bulk Voltage
        3. 9.2.4.3  Transformer Turn Ratio
        4. 9.2.4.4  Transformer Magnetizing Inductance
        5. 9.2.4.5  Current Sense Resistor RCS
        6. 9.2.4.6  Transformer Constraint Verification
        7. 9.2.4.7  Transformer Selection and Design
        8. 9.2.4.8  Slope Compensation Verification
        9. 9.2.4.9  Power MOSFET and Output Rectifier Selection
        10. 9.2.4.10 Output Capacitor Selection
        11. 9.2.4.11 Calculation of CC Mode Limit Point
        12. 9.2.4.12 VDD Capacitor Selection
        13. 9.2.4.13 Magnetic Sense Resistor Network Selection
        14. 9.2.4.14 Output LED Pre-Load Resistor Calculation
      5. 9.2.5 External Wake Pulse Calculation at VSENSE Pin (UCC28633 Only)
      6. 9.2.6 Energy Star Average Efficiency and Standby Power
      7. 9.2.7 Application Performance Plots
    3. 9.3 Dos and Don'ts
      1. 9.3.1 Test and Debug Recommendations
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 HV Pin
      2. 11.1.2 VDD Pin
      3. 11.1.3 VSENSE Pin
      4. 11.1.4 CS Pin
      5. 11.1.5 SD Pin
      6. 11.1.6 DRV Pin
      7. 11.1.7 GND Pin
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
        1. 12.2.1.1 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

9.2.4.9 Power MOSFET and Output Rectifier Selection

The initial design target proposed the use of a 100-V Schottky rectifier. The secondary-side reverse voltage stress can be verified using the final transformer design sh own in Equation 52.

Equation 52. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu53_lusbw3.gif

The value derived from Equation 52 is close to the original design target of 85 V.

For 65-W load, the average DC output current is 3.35 A for 19.5-V output. However, to reduce losses, a much higher current rated diode is typically used, to yield a much lower forward voltage drop VRECT. As shown in Figure 44, a 30-A rated diode D7 is used in this case, with a forward drop of approximately 0.45 V at 3.5 A, 100°C.

For the primary-side MOSFET, the peak voltage stress can be estimated using Equation 53.

Equation 53. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu54_lusbw3.gif

An allowance of at least 100 V must be added to this figure to account for the leakage inductance spike at turn-off. This voltage spike depends on the transformer implementation and the amount of leakage inductance, as well as the specific design of the snubber. A more aggressive snubber may reduce the voltage spike, but at the expense of higher losses in the snubber. A voltage rating of at least 600 V is recommended for the power MOSFET to allow for leakage.

The MOSFET rms current at low line, rated load, can be estimated using Equation 54.

Equation 54. UCC28630 UCC28631 UCC28632 UCC28633 UCC28634 qu55_lusbw3.gif

As can be seen in Figure 44, the chosen MOSFET Q1 is a 13-A, 600-V device.