SLUSC72C May   2015  – July 2024 UCC27201A-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 UVLO (Under Voltage Lockout)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. Power Supply Recommendations
  10. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Revision History

Changes from Revision B (March 2016) to Revision C (July 2024)

  • Changed document title to reflect the device's key features. Minor updates to several specifications to reflect the device characteristics. Go
  • Updated Features section: 1) Deleted HBM and CDM ESD classification levels to follow latest TI datashee standards. 2) Changed junction temperature range from -40°C to 140°C to -40°C to 150°C. 3) Deleted DMK package since device is obsolete. 4) Changed typical propagation delay from 20ns to 22ns. 5) Deleted "Greater than 1 MHz of Operation" since the switching frequency is not a specified parameter. 6) Changed typical bootstrap diode resistance from 0.6Ω to 0.65ΩGo
  • Updated Applications section with list of top 5 typical applications.Go
  • Updated Description section: 1) Deleted comparison to UCC27200 and UCC27201 products. 2) Clarified -18V HS tolerance is an absolute maximum specification. 3) Deleted references to DMK package.Go
  • Updated Pin Configuration and Functions Functions section - deleted 10-pin VSON DMK package information and updated PowerPAD description.Go
  • Updated Absolute Maximum Ratings section to remove "Power dissipation at TA = 25°C" and "Lead temperature (soldering, 10s)". Power dissipation can be calculated with thermal metrics in "Thermal Information" table.Go
  • Updated Recommended Operating Conditions: Operating Junction Temperature maximum changed from 140°C to 150°C.Go
  • Updated Thermal Information section to reflect device characteristics. Go
  • Updated Supply Currents specifications in the Electrical Characteristics table: 1) IDD typical changed (From: 0.4mA. To: 0.11mA). 2) IDDO typical changed (From: 3.8mA. To: 1mA). 3) IDDO maximum changed (From: 5.5mA. To: 3mA. 4) IHB typical changed (From: 0.4mA. To: 0.065mA). 5) IHBO typical changed (From: 2.5mA. To: 0.9mA). 6) IHBO maximum changed (From: 4mA. To: 3mA). 7) IHBS test condition changed to match VHS maximum recommended operating conditions (From: 110V. To: 105V). 8) IHBSO typical changed (From: 0.1mA. To: 0.03mA).Go
  • Updated Input specifications in the Electrical Characteristics table: 1) VHIT specifications changed (From: 1.7V typical, 2.5V maximum. To: 1.9V minimum, 2.3V typical, 2.7V maximum). 2) VLIT specifications changed (From: 0.8V minimum, 1.6V typical. To: 1.3V minimum, 1.6V typical, 1.9V maximum). 3) VIHYS typical changed (From: 100mV. To: 700mV). 4) RIN specifications changed from (100kΩ minimum, 200kΩ typical, 350kΩ maximum. To: 68kΩ typical). Go
  • Updated Bootstrap diode specifications in the Electrical Characteristics table: 1) RD test conditions changed (From: 100mA and 80mA. To: 120mA and 100mA). 2) RD typical changed (From: 0.6Ω. To: 0.65Ω). Updated LO/HO Gate Driver specifications in the Electrical Characteristics table: 1) VLOL typical changed (From 0.18V. To 0.1V). 2) VLOH typical changed (From: 0.25V. To: 0.13V). Go
  • Removed specifications with test conditions "-40°C to 125°C TJ", since all parameters are specified from -40°C to 150°C TJ (unless otherwise noted). Go
  • Changed Propagation Delays typical specification (From: 20ns. To: 22ns).Go
  • Updated Output Rise and Fall Time specifications: 1) tR typical changed (From: 0.35us. To: 0.26us). 2) tF typical changed (From: 0.3us. To: 0.22us). Go
  • Updated timing diagramsGo
  • Updated all plots in Typical Characteristics section to reflect the device's typical specification. Go
  • Updated Input Stages section to match the input typical specification in the electrical characteristics table - changed 200kΩ pull-down resistance, 1.7V input rising threshold to 8kΩ pull-down resistance, 2.3V input rising threshold. Go
  • Updated Typical Application section to display a different application diagram, updated Design Requirements section, and updated Detailed Design procedure section since information in previous revision of data sheet had an outdated circuit with obsolete part numbers. Go
  • Changed application curves to display propagation delay and rise/fall time plots. Go
  • Changed Power Supply Recommendations section to correctly describe that LO is sourced from VDD and HO is souced from HB. Go

Changes from Revision A (October 2015) to Revision B (March 2016)

  • Added 10-Pin VSON DMK Package information.Go

Changes from Revision * (May 2015) to Revision A (October 2015)

  • Changed ILO = IHO = –100 mA condition to ILO = IHO = 100 mA Go
  • Changed ILO = IHO = 100 mA condition to ILO = IHO = –100 mA Go