SLUSD12A October   2017  – February 2018 UCC28780

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      45-W, 20-V GaN-ACF Adapter Efficiency
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information of SOIC
    5. 6.5 Thermal Information of WQFN
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Description
      1. 7.3.1 BUR Pin (Programmable Burst Mode)
      2. 7.3.2 FB Pin (Feedback Pin)
      3. 7.3.3 VDD Pin (Device Bias Supply)
      4. 7.3.4 REF Pin (Internal 5-V Bias)
      5. 7.3.5 HVG and SWS Pins
      6. 7.3.6 RTZ Pin (Sets Delay for Transition Time to Zero)
      7. 7.3.7 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      8. 7.3.8 RUN Pin (Driver Enable Pin)
      9. 7.3.9 SET Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 7.4.2  Dead-Time Optimization
      3. 7.4.3  Control Law across Entire Load Range
      4. 7.4.4  Adaptive Amplitude Modulation (AAM)
      5. 7.4.5  Adaptive Burst Mode (ABM)
      6. 7.4.6  Low Power Mode (LPM)
      7. 7.4.7  Standby Power Mode (SBP)
      8. 7.4.8  Startup Sequence
      9. 7.4.9  Survival Mode of VDD
      10. 7.4.10 System Fault Protections
        1. 7.4.10.1 Brown-In and Brown-Out
        2. 7.4.10.2 Output Over-Voltage Protection
        3. 7.4.10.3 Over-Temperature Protection
        4. 7.4.10.4 Programmable Over-Power Protection
        5. 7.4.10.5 Peak Current Limit
        6. 7.4.10.6 Output Short-Circuit Protection
        7. 7.4.10.7 Over-Current Protection
        8. 7.4.10.8 Thermal Shutdown
      11. 7.4.11 Pin Open/Short Protections
        1. 7.4.11.1 Protections on CS pin Fault
        2. 7.4.11.2 Protections on HVG pin Fault
        3. 7.4.11.3 Protections on RDM and RTZ pin Faults
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application Circuit
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 8.2.2.2 Transformer Calculations
          1. 8.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 8.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 8.2.2.2.3 Primary Turns (NP)
          4. 8.2.2.2.4 Secondary Turns (NS)
          5. 8.2.2.2.5 Turns of Auxiliary Winding (NA)
          6. 8.2.2.2.6 Winding and Magnetic Core Materials
        3. 8.2.2.3 Clamp Capacitor Calculation
        4. 8.2.2.4 Bleed-Resistor Calculation
        5. 8.2.2.5 Output Filter Calculation
        6. 8.2.2.6 Calculation of ZVS Sensing Network
        7. 8.2.2.7 Calculation of Compensation Network
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 General Considerations
      2. 10.1.2 RDM and RTZ Pins
      3. 10.1.3 SWS Pin
      4. 10.1.4 VS Pin
      5. 10.1.5 BUR Pin
      6. 10.1.6 FB Pin
      7. 10.1.7 CS Pin
      8. 10.1.8 GND Pin
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

8.2.1 Design Requirements

Table 4. UCC28780 Electrical Performance Specifications for GaN FET(1)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT CHARACTERISTICS
VIN Input line voltage (RMS) 90 115 / 230 264 V
fLINE Input line frequency 47 50 / 60 63 Hz
PSTBY Input power at no-load VIN = 115 VRMS, IO = 0 A 41.1 mW
VIN = 230 VRMS, IO = 0 A 52.8 mW
P0.25W Input power at 0.25W load VIN = 115 VRMS, PO = 250.6 mW 383.8 mW
VIN = 230 VRMS, PO = 250.6 mW 435.0 mW
OUTPUT CHARACTERISTICS
VO Output voltage VIN = 115 VRMS, IO = 2.25 A 19.853 V
VIN = 230 VRMS, IO = 2.25 A 19.852
VIN = 115 VRMS, IO = 0 A 19.943
VIN = 230 VRMS, IO = 0 A 19.948
IO(FL) Full-load rated output current VIN = 90 to 264 VRMS 2.25 A
VO_pp Output ripple voltage VIN = 115 V / 230 VRMS, IO = 0 A to 2.25 A 80 mVpp
VIN = 115 V / 230 VRMS, IO = 2.25 A 45
VIN = 115 V / 230 VRMS, IO = 0 A 50
PO(OPP) Over-power protection power limit VIN = 90 to 264 VRMS 55 W
tOPP Over-power protection duration VIN = 90 to 264 VRMS, PO = PO(OPP) 160 ms
ΔVO Output voltage deviation during step load transient IO step between 0 A to 2.25 A < 5 %
SYSTEMS CHARACTERISTICS
η Full-load efficiency VIN = 115 VRMS, IO = 2.25 A 94.59 %
VIN = 230 VRMS, IO = 2.25 A 94.74 %
VIN = 90 VRMS, IO = 2.25 A 93.98 %
η 4-point average efficiency(2) VIN = 115 VRMS 93.88 %
VIN = 230 VRMS 92.47 %
η Efficiency at 10% load VIN = 115 VRMS, IO = 10% of IO(FL) 88.69 %
VIN = 230 VRMS, IO = 10% of IO(FL) 85.86 %
TAMB Ambient operating temperature range VIN = 90 to 264 VRMS, IO = 0 to 2.25 A 25 °C
(1) The performance listed in this table is achieved using secondary-resonance and based on the test results from a single board.
(2) Average efficiency of four load points, IO = 25%, 50%, 75%, and 100% of IO(FL).