SLUSD12A
October 2017 – February 2018
UCC28780
PRODUCTION DATA.
1
Features
2
Applications
3
Description
Device Images
Simplified Schematic
45-W, 20-V GaN-ACF Adapter Efficiency
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information of SOIC
6.5
Thermal Information of WQFN
6.6
Electrical Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Detailed Pin Description
7.3.1
BUR Pin (Programmable Burst Mode)
7.3.2
FB Pin (Feedback Pin)
7.3.3
VDD Pin (Device Bias Supply)
7.3.4
REF Pin (Internal 5-V Bias)
7.3.5
HVG and SWS Pins
7.3.6
RTZ Pin (Sets Delay for Transition Time to Zero)
7.3.7
RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
7.3.8
RUN Pin (Driver Enable Pin)
7.3.9
SET Pin
7.4
Device Functional Modes
7.4.1
Adaptive ZVS Control with Auto-Tuning
7.4.2
Dead-Time Optimization
7.4.3
Control Law across Entire Load Range
7.4.4
Adaptive Amplitude Modulation (AAM)
7.4.5
Adaptive Burst Mode (ABM)
7.4.6
Low Power Mode (LPM)
7.4.7
Standby Power Mode (SBP)
7.4.8
Startup Sequence
7.4.9
Survival Mode of VDD
7.4.10
System Fault Protections
7.4.10.1
Brown-In and Brown-Out
7.4.10.2
Output Over-Voltage Protection
7.4.10.3
Over-Temperature Protection
7.4.10.4
Programmable Over-Power Protection
7.4.10.5
Peak Current Limit
7.4.10.6
Output Short-Circuit Protection
7.4.10.7
Over-Current Protection
7.4.10.8
Thermal Shutdown
7.4.11
Pin Open/Short Protections
7.4.11.1
Protections on CS pin Fault
7.4.11.2
Protections on HVG pin Fault
7.4.11.3
Protections on RDM and RTZ pin Faults
8
Application and Implementation
8.1
Application Information
8.2
Typical Application Circuit
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Input Bulk Capacitance and Minimum Bulk Voltage
8.2.2.2
Transformer Calculations
8.2.2.2.1
Primary-to-Secondary Turns Ratio (NPS)
8.2.2.2.2
Primary Magnetizing Inductance (LM)
8.2.2.2.3
Primary Turns (NP)
8.2.2.2.4
Secondary Turns (NS)
8.2.2.2.5
Turns of Auxiliary Winding (NA)
8.2.2.2.6
Winding and Magnetic Core Materials
8.2.2.3
Clamp Capacitor Calculation
8.2.2.4
Bleed-Resistor Calculation
8.2.2.5
Output Filter Calculation
8.2.2.6
Calculation of ZVS Sensing Network
8.2.2.7
Calculation of Compensation Network
8.2.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.1.1
General Considerations
10.1.2
RDM and RTZ Pins
10.1.3
SWS Pin
10.1.4
VS Pin
10.1.5
BUR Pin
10.1.6
FB Pin
10.1.7
CS Pin
10.1.8
GND Pin
10.2
Layout Example
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Receiving Notification of Documentation Updates
11.3
Community Resources
11.4
Trademarks
11.5
Electrostatic Discharge Caution
11.6
Glossary
12
Mechanical, Packaging, and Orderable Information
6.7
Typical Characteristics
V
VDD
= 15V, R
RDM
= 115 kΩ, R
RTZ
= 140 kΩ, V
SET
= 0 V, and T
J
= T
A
= 25 ⁰C (unless otherwise noted)
Figure 1.
VDD Bias-Supply Current vs. VDD Bias-Supply Voltage
Figure 3.
VS Line-Sense Currents vs. Temperature
Figure 5.
CS Over-Power Threshold vs. VS Line-Sense Currents
Figure 7.
VS Over-Voltage Threshold vs. Temperature
Figure 9.
HVG Voltage vs. Temperature
Figure 11.
NTC Thresholds vs. Junction Temperature
Figure 2.
VDD Bias-Supply Current vs. Junction Temperature
Figure 4.
Percentage Variation of Maximum and Minimum CS Thresholds vs. Temperature
Figure 6.
t
Z
Compensation Ratio (K
TZ
) vs. VS Line-Sense Currents
Figure 8.
REF Voltage vs. Temperature
Figure 10.
HVG Voltage vs. HVG Current