SLUSD48C July   2018  – March 2022 UCC24624

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description, Continued
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Management
      2. 8.3.2 Synchronous Rectifier Control
      3. 8.3.3 Turn-off Threshold Adjustment
      4. 8.3.4 Noise Immunity
        1. 8.3.4.1 On-Time Blanking
        2. 8.3.4.2 Off-Time Blanking
        3. 8.3.4.3 Two-Channel Interlock
        4. 8.3.4.4 SR Turn-on Re-arm
        5. 8.3.4.5 Adaptive Turn-on Delay
      5. 8.3.5 Gate Voltage Clamping
      6. 8.3.6 Standby Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 UVLO Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Run Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 MOSFET Selection
        2. 9.2.2.2 Snubber Design
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks

1 Features

  • 230-V VD pins rating
  • 23-ns turn-off delay to support LLC operating above resonant frequency and up to 625-kHz switching frequency
  • Proportional gate drive to extend the SR conduction time
  • Adjustable turn-off threshold for minimum body diode conduction
  • Automatic standby mode detection with 180 µA of low standby current
  • Wide 4.25-V to 26-V VDD operation range with internal clamp
  • Adaptive turn-on delay for better DCM ring rejection
  • Two-channel interlock to prevent shoot-through
  • Integrated 1.5-A source and 4-A sink capability gate driver for N-channel MOSFETs
  • 8-pin SOIC package