SLUSDA4B February   2019  – October 2019 TPS562231

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      TPS562231 Efficiency
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Adaptive On-Time Control and PWM Operation
      2. 7.3.2 Soft Start and Pre-Biased Soft Start
      3. 7.3.3 Over Current and Short Circuit Protection
      4. 7.3.4 Undervoltage Lockout (UVLO) Protection
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Continuous Conduction Mode (CCM)
      3. 7.4.3 Pulse Skip Mode (PSM, TPS562231)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Resistors Selection
        2. 8.2.2.2 Output Filter Selection
        3. 8.2.2.3 Input Capacitor Selection
        4. 8.2.2.4 Bootstrap Capacitor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

TJ = –40°C to 125°C, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY (VIN PIN)
IVIN Operating – non-switching supply current VEN = 5 V, VFB = 0.7 V 220 300 µA
IVINSDN Shutdown supply current VEN = 0 V 2 12 µA
VIN_UVLO Undervoltage lockout thresholds Rising threshold 4.0 4.3 V
Falling threshold 3.3 3.6
Hysteresis 0.4
ENABLE (EN PIN)
VENH EN high-level input voltage 1.1 1.24 1.42 V
VENL EN low-level input voltage 1 1.13 1.3 V
REN EN pin resistance to GND VEN = 12 V 1000 kΩ
VOLTAGE REFERENCE (FB PIN)
VREF Reference voltage VIN = 4.5 V to 17 V, TJ = 25 °C 588 600 612 mV
VIN = 4.5 V to 17 V, TJ = –40°C to 125°C 600 mV
IFB VFB input current VFB = 0.6 V 0 ±100 nA
MOSFET
RDSON_H High-side switch resistance TJ = 25°C, VBST – VSW = 5.5 V 95 mΩ
RDSON_L Low-side switch resistance TJ = 25°C 55 mΩ
CURRENT LIMIT
IOC_LS Low side FET source current limit 2.3 2.8 3.3 A
IZC Zero cross current detection TPS562231 0 A
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold(1) Shutdown temperature 160 °C
Hysteresis 25
ON-TIME TIMER CONTROL
tON(MIN) Minimum on time(1) 80 ns
tOFF(MIN) Minimum off time(1) VFB = 0.5 V 250 ns
SOFT START
Tss Soft-start time Internal soft-start time 1.5 ms
FREQUENCY
Fsw Switching frequency VIN = 12 V, VOUT = 3.3 V, CCM mode 850 kHz
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VUVP Output UVP falling threshold Hiccup detect 65 %
THICCUP_WAIT UVP propagation delay 0.6 ms
THICCUP_RE Hiccup time before restart 24 ms
(1) Not production tested.