SLUSDF5A January   2019  – August 2019 TPS560430-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency vs Output Current VOUT = 5 V, 2100 kHz, PFM
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Fixed Frequency Peak Current Mode Control
      2. 8.3.2 Adjustable Output Voltage
      3. 8.3.3 Enable
      4. 8.3.4 Minimum ON-Time, Minimum OFF-Time and Frequency Foldback
      5. 8.3.5 Bootstrap Voltage
      6. 8.3.6 Over Current and Short Circuit Protection
      7. 8.3.7 Soft Start
      8. 8.3.8 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
      3. 8.4.3 CCM Mode
      4. 8.4.4 Light-Load Operation (PFM Version)
      5. 8.4.5 Light-Load Operation (FPWM Version)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Custom Design With WEBENCH® Tools
        2. 9.2.2.2 Output Voltage Set-Point
        3. 9.2.2.3 Switching Frequency
        4. 9.2.2.4 Inductor Selection
        5. 9.2.2.5 Output Capacitor Selection
        6. 9.2.2.6 Input Capacitor Selection
        7. 9.2.2.7 Bootstrap Capacitor
        8. 9.2.2.8 Under Voltage Lockout Set-Point
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Compact Layout for EMI Reduction
      2. 11.1.2 Feedback Resistors
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Compact Layout for EMI Reduction

Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing ceramic bypass capacitor(s) as close as possible to the VIN and GND pins is the key to EMI reduction.

The SW pin connecting to the inductor should be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) should be used for high current conduction path to minimize parasitic resistance. The output capacitors should be placed close to the VOUT end of the inductor and closely grounded to GND pin.