SLUSEE5D January   2022  – April 2024 TPS4811-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Pump and Gate Driver output (VS, PU, PD, BST, SRC)
      2. 8.3.2  Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS48111-Q1 Only)
      3. 8.3.3  Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection With Auto-Retry
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
      4. 8.3.4  Short-Circuit Protection
      5. 8.3.5  Analog Current Monitor Output (IMON)
      6. 8.3.6  Overvoltage (OV) and Undervoltage Protection (UVLO)
      7. 8.3.7  Device Functional Mode (Shutdown Mode)
      8. 8.3.8  Remote Temperature sensing and Protection (DIODE)
      9. 8.3.9  Output Reverse Polarity Protection
      10. 8.3.10 TPS4811x-Q1 as a Simple Gate Driver
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving HVAC PTC Heater Load on KL40 Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Driving B2B FETs With Pre-charging the Output Capacitance
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.5 Analog Current Monitor Output (IMON)

TPS4811x-Q1 features an accurate analog load current monitor output (IMON) with adjustable gain. The current source at IMON terminal is configured to be proportional to the current flowing through the RSNS current sense resistor. This current can be converted to a voltage using a resistor RIMON from IMON terminal to GND terminal. This voltage, computed using Equation 10, can be used as a means of monitoring current flow through the system.

Use Equation 10 to calculate the V(IMON).

Equation 10. V ( I M O N )   =   ( V S N S   +   V ( O S _ S E T ) )   ×   G a i n

Where VSNS = I_LOAD × RSNS and V(OS_SET) is the input referred offset (± 200 µV) of the current sense amplifier (VSNS to V(IMON) scaling). Use the following equation to calculate gain.

Equation 11. GUID-20220112-SS0I-SD0R-M34N-C1MGDHZHLGZR-low.svg

Where 0.9 is the current mirror factor between the current sense amplifier and the IMON pass FET.

The maximum voltage range for monitoring the current (V(IMONmax)) is limited to minimum([V(VS) – 0.5V], 5.5V) to ensure linear output. This puts limitation on maximum value of RIMON resistor. The IMON pin has an internal clamp of 6.5 V (typical).

Accuracy of the current mirror factor is < ± 1%. Use the following equation to calculate the overall accuracy of V(IMON).

Equation 12. %   V ( I M O N )   =   V ( O S _ S E T ) V S N S   ×   100

Figure 8-11 shows external connections and simplified block diagram of current sensing and overcurrent protection implementation.

GUID-20220111-SS0I-CV9P-BN0T-4JWMJXCCD6F6-low.svg Figure 8-11 Current sensing and Overcurrent protection