SLUSEE5D January   2022  – April 2024 TPS4811-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Pump and Gate Driver output (VS, PU, PD, BST, SRC)
      2. 8.3.2  Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS48111-Q1 Only)
      3. 8.3.3  Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection With Auto-Retry
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
      4. 8.3.4  Short-Circuit Protection
      5. 8.3.5  Analog Current Monitor Output (IMON)
      6. 8.3.6  Overvoltage (OV) and Undervoltage Protection (UVLO)
      7. 8.3.7  Device Functional Mode (Shutdown Mode)
      8. 8.3.8  Remote Temperature sensing and Protection (DIODE)
      9. 8.3.9  Output Reverse Polarity Protection
      10. 8.3.10 TPS4811x-Q1 as a Simple Gate Driver
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving HVAC PTC Heater Load on KL40 Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Driving B2B FETs With Pre-charging the Output Capacitance
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

10.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.