SLUSEE5D January   2022  – April 2024 TPS4811-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Pump and Gate Driver output (VS, PU, PD, BST, SRC)
      2. 8.3.2  Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS48111-Q1 Only)
      3. 8.3.3  Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection With Auto-Retry
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
      4. 8.3.4  Short-Circuit Protection
      5. 8.3.5  Analog Current Monitor Output (IMON)
      6. 8.3.6  Overvoltage (OV) and Undervoltage Protection (UVLO)
      7. 8.3.7  Device Functional Mode (Shutdown Mode)
      8. 8.3.8  Remote Temperature sensing and Protection (DIODE)
      9. 8.3.9  Output Reverse Polarity Protection
      10. 8.3.10 TPS4811x-Q1 as a Simple Gate Driver
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving HVAC PTC Heater Load on KL40 Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Driving B2B FETs With Pre-charging the Output Capacitance
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.1 Overview

The TPS4811x-Q1 family is a 100-V smart high side driver with protection and diagnostics. With wide operating voltage range of 3.5 V – 80 V, the device is suitable for 12-V, 24-V, and 48-V system designs.

The device has a strong 3.7-A peak source (PU) and 4-A peak sink (PD) GATE driver that enables power switching using parallel FETs in high current system designs. Use INP as the gate driver control input. MOSFET slew rate control (ON and OFF) is possible by placing external R-C components.

The device has accurate current sensing (±2 % at 30-mV VSNS) output (IMON) enabling systems for energy management. The device has integrated two-level overcurrent protection with FLT_I output with complete adjustability of thresholds and response time. Auto-retry and latch-off fault behavior can be configured.

The device features remote overtemperature protection with FLT_T output enabling robust system protection.

TPS48110-Q1 has an accurate overvoltage protection (< ±2 %), providing robust load protection.

The TPS48111-Q1 integrates a pre-charge driver (G) with control input (INP_G). This feature enables system designs that need to drive large capacitive loads by pre-charging first and then turning ON the main power FETs.

TPS4811x-Q1 has an accurate undervoltage protection (< ±2 %) using EN/UVLO pin. Pull EN/UVLO low (< 0.3 V) to turn OFF the device and enter into shutdown state. In shutdown mode, the controller draws a total shutdown current of 1.6 µA at 48-V supply input.