SLUSEQ9D July   2022  – April 2024 TPS1211-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS12111-Q1 Only)
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection with Auto-Retry
        2. 8.3.3.2 Overcurrent Protection with Latch-Off
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 Overvoltage (OV) and Undervoltage Protection (UVLO)
      6. 8.3.6 Remote Temperature Sensing and Protection (DIODE)
      7. 8.3.7 Output Reverse Polarity Protection
      8. 8.3.8 TPS1211x-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Zonal Controller Loads on 12-V Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Reverse Polarity Protection with TPS12110-Q1
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3.5V to 40V input range (45V absolute maximum)
  • Output reverse polarity protection down to –30V
  • Integrated 12V charge pump with 100µA capacity
  • Low 0.9µA shutdown current (EN/UVLO = Low)
  • Strong pullup (3.7A) and pulldown (4A) gate driver
  • Drives external back-to-back N-channel MOSFETs
  • Variant with integrated pre-charge switch driver (TPS12111-Q1) to drive capacitive loads
  • Two-level adjustable overcurrent protection (IWRN, ISCP) with adjustable response time (TMR) and fault flag output (FLT_I)
  • Fast short-circuit protection: 1.2µs (TPS12111-Q1, TPS12112-Q1), 4µs (TPS12110-Q1)
  • Accurate analog current monitor output (IMON): ±2% at 30mV (VSNS)
  • Accurate, adjustable undervoltage lockout (UVLO) and overvoltage protection (OV): < ±2%
  • Remote overtemperature sensing (DIODE) and protection with fault flag output (FLT_T)
  • Pin-to-pin compatible with TPS4811-Q1