SLUSEQ9D July   2022  – April 2024 TPS1211-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS12111-Q1 Only)
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection with Auto-Retry
        2. 8.3.3.2 Overcurrent Protection with Latch-Off
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 Overvoltage (OV) and Undervoltage Protection (UVLO)
      6. 8.3.6 Remote Temperature Sensing and Protection (DIODE)
      7. 8.3.7 Output Reverse Polarity Protection
      8. 8.3.8 TPS1211x-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Zonal Controller Loads on 12-V Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Reverse Polarity Protection with TPS12110-Q1
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

TJ = –40℃ to +125℃; typical values at TJ = 25°C, V(VS) = V(CS+) = V(CS–) = 12 V, V(BST – SRC) = 12 V, V(SRC) = 0 V, VSNS = Voltage across RSNS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE
V(VS) Operating input voltage 3.5 40 V
V(VS_PORR) VS POR threshold, rising 2.75 3 3.2 V
V(VS_PORF) VS POR threshold, falling 2.65 2.9 3.1 V
I(Q) Total System Quiescent current, I(GND) V(EN/UVLO) = 2 V 613 700 µA
I(SHDN) SHDN current, I(GND) V(EN/UVLO) = 0 V, V(SRC) = 0 V 0.9 5.36 µA
V(EN/UVLO) = 0 V, V(SRC) = 0 V, –40℃ < Tj < 85℃ 0.9 2.65 µA
ENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO)  INPUT
V(UVLOR) UVLO threshold voltage, rising 1.16 1.18 1.2 V
V(UVLOF) UVLO threshold voltage, falling 1.1 1.11 1.13 V
V(ENR) Enable threshold voltage for low IQ shutdown, rising 1 V
V(ENF) Enable threshold voltage for low IQ shutdown, falling 0.3 V
I(EN/UVLO) Enable input leakage current V(EN/UVLO)  = 12 V 61 320 nA
OVER VOLTAGE PROTECTION (OV) INPUT - TPS12110-Q1 and TPS12112-Q1 Only
V(OVR) Overvoltage threshold input, risIng TPS12110-Q1 and TPS12112-Q1 Only 1.16 1.18 1.2 V
V(OVF) Overvoltage threshold input, falling 1.1 1.11 1.13 V
I(OV) OV Input leakage current 0 V < V(OV) < 5 V 60 300 nA
CHARGE PUMP (BST–SRC)
I(BST) Charge Pump Supply current V(BST – SRC)  = 10 V 80 100 126 µA
V(BST – SRC) Charge Pump Turn ON voltage 11 11.7 12.3 V
Charge Pump Turn OFF voltage 11.6 12.3 13 V
V(BST_UVLOR) V(BST – SRC) UVLO voltage threshold, rising 7 7.6 8.1 V
V(BST_UVLOF) V(BST – SRC) UVLO voltage threshold, falling 6 6.5 6.9 V
V(BST – SRC) Charge Pump Voltage at V(VS) = 3.5 V 8.6 V
GATE DRIVER OUTPUTS (PU, PD, G)
R(PD) Pull-Down Resistance 0.69 1.34 Ω
I(PU) Peak Source Current 3.75 A
I(PD) Peak Sink Current 4 A
I(G) Gate charge (sourcing) current, on state TPS12111-Q1 Only 72 100 140 µA
Gate discharge (sinking) current, off state 92 131 190 mA
CURRENT SENSE AND OVER CURRENT PROTECTION (CS+, CS–, IMON, ISCP, IWRN)
V(OS_SET) Input referred offset (VSNS to V(IMON) scaling) RSET = 100 Ω, RIMON =  5 kΩ, 10 kΩ (corresponds to  VSNS = 6 mV to 30 mV) Gain of 45 and 90 respectively. –200 200 µV
V(GE_SET) Gain error (VSNS to V(IMON) scaling) –1.27 1.27 %
V(IMON_Acc) IMON accuracy VSNS = 30 mV, RSET = 100 Ω, RIMON =  10 kΩ  –2 2 %
VSNS = 6 mV, RSET = 100 Ω, RIMON =  5 kΩ  –5 5 %
V(SNS_WRN) Overcurrent protection (OCP) voltage threshold RSET = 100 Ω, RIWRN = 39.7 kΩ 29.2 30.6 31.5 mV
RSET = 100 Ω, RIWRN = 120 kΩ 8 10 12 mV
I(ISCP) SCP Input Bias current 13.7 15.6 17.6 µA
V(SNS_SCP) Short-circuit protection (SCP) voltage threshold RISCP =  2.1 kΩ 35 40 45 mV
RISCP = 750 Ω 19 mV
DELAY TIMER (TMR)
I(TMR_SRC_CB) TMR source current 73 82 91 µA
I(TMR_SRC_FLT) TMR source current  2.1 2.5 3.3 µA
I(TMR_SNK) TMR sink current 2.1 2.5 3 µA
V(TMR_OC) TMR voltage threshold for over current shutdown 1.112 1.2 1.3 V
V(TMR_FLT) TMR voltage threshold for FLT_T assertion 1.03 1.1 1.2 V
V(TMR_LOW) Voltage at TMR pin for AR counter falling threshold 0.15 0.2 0.22 V
INPUT CONTROLS (INP, INP_G), FAULT FLAGS (FLT_I, FLT_T)
R(FLT_I) FLT_I Pull-down resistance 54 70 90 Ω
R(FLT_T) FLT_T Pull-down resistance 70 Ω
I(FLT_T) FLT Input leakage current 400 nA
V(INP_H) 1.6 2 V
V(INP_L) 0.8 1.2 V
V(INP_Hys) 400 mV
V(INP_G_H) TPS12111-Q1 Only 1.6 2 V
V(INP_G_L) 0.8 1.2 V
V(INP_G_Hys) 400 mV
TEMPERATURE SENSING AND PROTECTION (DIODE)
I(DIODE) External diode current source High level 160 µA
Low level 10 µA
Diode current ratio 15.4 16 16.6 A/A
T(DIODE_TSD_rising) DIODE sense TSD rising threshold With MMBT3904 BJT for sensing 140 150 160 ℃