SLUSFF2 October   2024 UCG28826

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Detailed Pin Descriptions
      1. 6.3.1  HV - High Voltage Input
      2. 6.3.2  SW - Switch Node
      3. 6.3.3  GND – Ground Return
      4. 6.3.4  FLT - External Overtemperature Fault
      5. 6.3.5  FB ­­– Feedback
      6. 6.3.6  TR - Turns Ratio
      7. 6.3.7  IPK - Peak Current and Dithering
      8. 6.3.8  FCL - Frequency clamp and fault response
      9. 6.3.9  CDX - CCM, drive strength and X-cap discharge
      10. 6.3.10 VCC - Input Bias
    4. 6.4 Feature Description
      1. 6.4.1  Self Bias and Auxless Sensing
      2. 6.4.2  Control Law
        1. 6.4.2.1 Valley Switching
        2. 6.4.2.2 Frequency Foldback
        3. 6.4.2.3 Burst Mode
        4. 6.4.2.4 Continuous Conduction Mode (CCM)
      3. 6.4.3  GaN HEMT Switching Capability
      4. 6.4.4  Soft Start
      5. 6.4.5  Frequency Clamp
      6. 6.4.6  Frequency Dithering
      7. 6.4.7  Slew Rate Control
      8. 6.4.8  Transient Peak Power Capability
      9. 6.4.9  X-Cap Discharge
      10. 6.4.10 Fault Protections
        1. 6.4.10.1 Brownout Protection
        2. 6.4.10.2 Short-Circuit Protection
        3. 6.4.10.3 Output Over Voltage Protection
        4. 6.4.10.4 Over Power Protection (OPP, LPS)
        5. 6.4.10.5 Overtemperature Protection
        6. 6.4.10.6 Open FB Protection
        7. 6.4.10.7 Error Codes for Protections
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Bulk Capacitor
        2. 7.2.2.2 Transformer Primary Inductance and Turns Ratio
        3. 7.2.2.3 Output Capacitor
        4. 7.2.2.4 Selection Resistors
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Package Option Addendum
    2. 10.2 Mechanical Data

6.4.3 GaN HEMT Switching Capability

The UCG28826's primary-side integrated GaN HEMT's switching capability is explained with the help of Figure 6-8. The figure shows the drain-source voltage (same as SW pin voltage) for the UCG28826 for two distinct switching cycles in a flyback application. The first is a normal switching cycle followed by a surge switching cycle in DCM/valley switching condition.

UCG28826 GaN HEMT Switching Capability Figure 6-8 GaN HEMT Switching Capability

Each cycle starts before t0 with the GaN HEMT in on state. At t0, the GaN HEMT turns off and the parasitic elements cause the drain-source voltage to ring at a high frequency. The high frequency ringing has damped out by t1. Between t1 and t2, the HEMT drain-source is at a flat plateau voltage with reducing secondary winding current in a flyback design. At t2, the GaN HEMT turns on at a valley. For normal operation, the transient ring voltage is limited to 700V and the plateau is limited to 560V. For rare surge events, the transient ring voltage is limited to 800V and the plateau is limited to 750V.