SLUSFM2 August 2024 LMR51440-Q1 , LMR51450-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT | ||||||
IQ-nonSW | Operating quiescent current (non-switching) | VEN = 3.3V (PFM variant only) | 25 | µA | ||
ISD | Shutdown quiescent current; measured at VIN pin | VEN = 0V, VIN = 24V | 3 | 6 | µA | |
VIN_OPERATE | VIN UVLO threshold | VIN rising, needed to start up | 3.9 | V | ||
VIN falling, once operating | 3.4 | V | ||||
ENABLE | ||||||
VEN-H | Enable input high level | EN rising, enable switching | 1.1 | 1.25 | 1.4 | V |
VEN-L | Enable input low level | EN falling, disable switching | 0.8 | 1 | 1.12 | V |
ILKG-EN | Enable input leakage current | VEN = 3.3V | 0.1 | µA | ||
VOLTAGE REFERENCE (FB PIN) | ||||||
VFB | Feedback voltage | TJ = 25°C | 0.792 | 0.8 | 0.808 | V |
ILKG-FB | Feedback leakage current | FB = 1V | 100 | nA | ||
CURRENT LIMITS AND HICCUP | ||||||
ISC | High-side current limit(3) | 5A version | 6.3 | 7.6 | 8.9 | A |
ILS-LIMIT | Low-side current limit(3) | 5A version | 5 | A | ||
ISC | High-side current limit(3) | 4A version | 5.5 | 6.5 | 7.5 | A |
ILS-LIMIT | Low-side current limit(3) | 4A version | 4 | A | ||
IL-ZC | Zero cross detector threshold | PFM variants only | –0.1 | A | ||
IPEAK-MIN | Minimum inductor peak current(3) | 5A version, PFM variants only | 0.9 | A | ||
IPEAK-MIN | Minimum inductor peak current(3) | 4A version, PFM variants only | 0.7 | A | ||
IL-NEG | Negative current limit(3) | 5A version, FPWM variant only | –2.5 | A | ||
IL-NEG | Negative current limit(3) | 4A version, FPWM variant only | –1.7 | A | ||
VHICCUP | Ratio of FB voltage to in-regulation FB voltage | 40% | ||||
POWER GOOD | ||||||
VPG-HIGH-UP | Power-Good upper threshold - rising | % of FB voltage | 110% | 112% | 115% | |
VPG-LOW-DN | Power-Good lower threshold - falling | % of FB voltage | 88% | 90% | 92% | |
VPG-HYS | Power-Good hysteresis (rising and falling) | % of FB voltage | 2.0% | |||
VPG-VALID | Minimum input voltage for proper Power-Good function | 1.5 | V | |||
RPG | Power-Good ON-resistance | VEN = 3.3V | 84 | Ω | ||
MOSFETS | ||||||
RDS-ON-HS | High-side MOSFET ON-resistance | 78 | mΩ | |||
RDS-ON-LS | Low-side MOSFET ON-resistance | 45 | mΩ | |||
VBOOT-SW-UVLO(R) | BOOT-SW UVLO rising threshold | VBOOT-SW rising | 2.2 | V | ||
SWITCHING CHARACTERISTICS | ||||||
FSW (CCM) | Switching frequency | RT = 34.8kΩ | 345 | 400 | 455 | kHz |
FSW (CCM) | Switching frequency | RT = Open or pull up to voltage >1.0V | 395 | 440 | 485 | kHz |
FSW (CCM) | Switching frequency | RT = 13.3kΩ | 1000 | kHz | ||
FSW (CCM) | Switching frequency | RT = Short to GND | 1000 | kHz | ||
FSPREAD | Switching frequency dithering | Frequency dithering over center frequency | ±10% | |||
TIMING REQUIREMENT | ||||||
tON-MIN | Minimum switch on-time(2) | VIN = 24V, Iout = 1A | 75 | ns | ||
tOFF-MIN | Minimum switch off-time | 135 | ns | |||
tON-MAX | Maximum switch on-time | 5 | µs | |||
tSS | Internal soft-start time | 3.2 | 5 | 7.2 | ms | |
tHICCUP | Time between current-limit hiccup burst |
96 | ms | |||
THERMAL SHUTDOWN | ||||||
TSD-Rising(2) | Thermal shutdown | Shutdown threshold | 160 | ℃ | ||
TSD-Falling(2) | Thermal shutdown | Recovery threshold | 140 | ℃ |