SLUUCE8A February 2021 – October 2021 UCC25800-Q1
UCC28782EVM-030 list of materials for the schematic diagrams shown in Figure 3-1 and in Figure 3-2.
Quantity | Designator | Description | Part Number | Manufacturer |
---|---|---|---|---|
1 | C1 | Capacitor, ceramic, 10 µF, 50 V, 10%, X7R, AEC-Q200, Grade 1, 1206 | CGA5L1X7R1H106K160AC |
TDK |
2 |
C2, C8 | Capacitor, ceramic, 1.0 µF, 25 V, 10%, X7R, AEC-Q200, Grade 1, 0603 |
CGA3E1X7R1E105K080AC |
TDK |
2 | C3, C9 | Capacitor, ceramic, 22 nF, 50 V, 10%, X7R, 0603 | C0603C223K5RACTU |
Kermet |
2 |
C4, C33 | Capacitor, ceramic, 1.0 µF, 25 V, 10%, X7R, AEC-Q200, Grade 1, 0805 |
CGA4J3X7R1H105K125AB |
TDK |
3 |
C5, C6, C12 | Capacitor, ceramic, 2.2 µF, 50 V, 10%, X7R, AEC-Q200, Grade 1, 0805 |
CGA4J3X7R1H225K125AB |
TDK |
1 | C12 | Capacitor, ceramic, 0.22 µF, 16 V, 10%, X7R, 0402 | GRM155R71C224KA12D | MuRata |
2 |
C10, C11 | Capacitor, ceramic, 2.2 µF, 10 V, 10%, X7R, 0805 |
C0805C225K8RACTU |
Kermet |
4 |
C13, C22, C23, C31 | Capacitor, ceramic, 10 µF, 50 V, 10%, AEC-Q200, Grade 1, 1210 |
CGA6P3X7S1H106K250AE |
TDK |
0 |
C14 |
Not used |
||
1 |
C15 | Capacitor, ceramic, 10 µF, 50 V, 10%, X7S, AEC-Q200 Grade 1, 1210 |
CGA6P3X7S1H106K250AB |
TDK |
1 |
C16 | Capacitor, ceramic, 0.1 µF, 50 V, ±10%, X7R, AEC-Q200 Grade 1, 0805 |
CEU4J2X7R1H104K125AE |
TDK |
0 |
C17, C18, C19 |
Deleted from the design |
||
1 |
C20 | Capacitor, ceramic, 0.033 µF, 50 V, 5%, X7R, 0603 |
06035C333JAT2A |
AVX |
1 | C21 | Capacitor, ceramic, 100 pF, 100 V, 5%, NP0, AEC-Q200 Grade 1, 0603 |
GCM1885C2A101JA16D |
MuRata |
1 | C24, C34 | Capacitor, ceramic, 2.2 µF, 100 V, ±10%, X7R, AEC-Q200 Grade 1, 1210 |
CGA6N3X7R2A225K230AB |
TDK |
5 |
C25, C26, C27, C28, C29 | Capacitor, ceramic, 10 µF, 50 V, ±10%, X7R, 1210 |
GRM32ER71H106KA12L |
MuRata |
1 |
C30 | Capacitor, ceramic, 0.22 µF, 25 V, ±10%, X7R, AEC-Q200 Grade 1, 0603 |
GCM188R71E224KA55D |
Murata |
1 | C32 | Capacitor, ceramic, 1200 pF, 100 V, ±5%, C0G/NP0, 0603 |
GRM1885C2A122JA01D |
MuRata |
1 |
C35 | Capacitor, ceramic, 0.01 µF, 50 V, 5%, C0G/NP0, AEC-Q200 Grade 1, 0603 |
CGA3E2C0G1H103J080AA |
TDK |
1 | C36 | Capacitor, ceramic, 1 µF, 16 V, 20%, X7R, AEC-Q200 Grade 1, 0603 |
GCM188R71C105MA64D |
Murata |
1 | C37 | Capacitor, 100 pF, 50 V,±1%, C0G/NP0, 0603 |
C0603C101F5GACTU |
Kermet |
0 |
C14 |
Not used |
||
0 |
C7, C17, C18, C19 |
Deleted from the design |
||
1 |
D1 | Diode, TVS, 5 V, bidirectional, SOD-323 | PESD5V0L1BA,115 | NXP Semiconductor |
2 |
D2, D4 | Diode, Schottky 40 V, 1 A Surface Mount SMA | CMSH1-40M TR13 | Diodes, Inc. |
0 |
D3 |
Not used |
||
1 |
D5 | Diode, Zener, 6.2 V, 150 mW, SOD-523F | CZRU52C6V2 | Comchip Technology |
1 |
D6 |
Diode, Schottky, 60 V, 3 A, AEC-Q101, SMA |
B360AM-13-F |
Diodes Inc. |
1 | D7 |
Diode, TVS, Bi, 36 V, SMB |
SMBJ36CA-13-F |
Diodes Inc. |
4 |
J1, J2, J3, J4 |
Header, 100mil, 1pos, Gold, TH |
TSW-101-07-G-S |
Samtec |
1 | L1 |
Coupled inductor, 1.5 µH, 17.5 A, 0.012 Ω, SMD |
7448700015 |
Wurth Elektronik |
1 | L2 |
Coupled inductor, 11 µH, 2.5 A, 0.03 Ω, SMD |
744273102 |
Wurth Elektronik |
1 | L3 |
Not used |
||
2 |
P1, P2 |
TERM BLOCK HDR 2POS 90DEG 5MM |
691313710002 |
Wurth Elektronik |
1 |
Plug for P1 or P2 |
Term Block 2Pos Plug for P1 or P2 |
691352710002 |
Wurth Elektronik |
1 |
P3 |
TERM BLOCK HDR 3POS 90DEG 5MM |
691313710003 |
Wurth Elektronik |
1 |
Plug for P3 |
Term Block 3Pos Plug for P3 |
691352710003 |
Wurth Elektronik |
1 | Q1 | Transistor, NPN, 40 V, 0.6 A, AEC-Q101, SOT-23 | SMBT2222AE6327HTSA1 | Infineon Technologies |
0 |
Q1 |
Q1 second source |
MMBT2222A-7-F |
Diodes Incorporated |
1 | Q2 |
MOSFET, N-CH, 60 V, 50 A, SO-8FL |
NVMFS5C673NLWFAFT1G |
ON Semi |
1 | R1, R12 | Resistor, 16.5 kΩ, 1%, 0.125 W, AEC-Q200 Grade 0, 0805 | CRCW080516K5FKEA | Vishay-Dale |
1 | R4 |
Not used |
||
1 | R5 | Resistor, 549Ω, 5%, 0.125 W, AEC-Q200 Grade 0, 0805 | CRCW0805549RFKEA | Vishay-Dale |
1 | R6 | Resistor, 6.34 kΩ, 1%, 0.125 W, AEC-Q200 Grade 0, 0805 | CRCW08056K34FKEA | Vishay-Dale |
1 | R7, R10 | Resistor, 1.0 kΩ, 5%, 0.125 W, AEC-Q200 Grade 0, 0805 | CRCW08051K00JNEA | Vishay-Dale |
1 | R8, R13 | Resistor, 51 Ω, 0.1%, 0.125 W, 0805 | RG2012P-510-B-T5 | Susumu Co Ltd |
1 | R9 | Resistor, 1.00 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW06031K00FKEA | Yageo America |
1 | R11 | Resistor, 49.9 kΩ, 1%, 0.125 W, AEC-Q200 Grade 0, 0805 | CRCW080549K9FKEB | Vishay-Dale |
1 | R14 | Resistor, 30.1 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW060330K1FKEA | Vishay-Dale |
1 | R15 | Resistor, 10.0 Ω, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW060310R0FKEA | Vishay-Dale |
1 | R16 | Resistor, 34.0 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW060334K0FKEA | Vishay-Dale |
1 | R17 | Resistor, 100 Ω, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW0603100RFKEA | Vishay-Dale |
1 |
R18 | Resistor, 0.01 Ω, 1%, 1 W, 1508 | RL3720WT-R010-F | Susumu Co Ltd |
1 | R19 | Resistor, 2.32 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 |
CRCW06032K32FKEA |
Vishay-Dale |
1 |
R20 | Resistor, 51.0 kΩ, 1%, 0.1 W, 0603 | RC0603FR-0751KL |
Yageo |
1 | R21 | Resistor, 9.09 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 |
CRCW06039K09FKEA |
Vishay-Dale |
1 | R22 | Resistor, 3.48 kΩ, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 | CRCW06033K48FKEA | Vishay-Dale |
1 | R23 | Resistor, 0 Ω, 1%, 0.25 W, AEC-Q200 Grade 0, 1206 | CRCW12060000Z0EA | Vishay-Dale |
0 |
R2, R3 |
Not used |
||
1 | T1 |
Transformer, 1:1.67, 0.045 Ω Pri, 0.122-Ω Sec, 16.5 µH |
750319177r02 |
Wurth Electronik |
1 | U1 | Open Loop LLC Transformer Driver for Isolated Bias Supplies | UCC25800AQDGNRQ1 |
Texas Instruments |
1 | U2, U3 |
Programmable Shunt Regulator with Optimized Reference Current, DBZ0003A (SOT-23-3) |
ATL431LIBQDBZRQ1 |
Texas Instruments |
1 | U4 | 2.2-MHz Wide VIN 65-V Non-synchronous Boost/SEPIC/Flyback Controller with Dual Random Spread Spectrum, WSON12 |
LM51561QDSSRQ1 |
Texas Instruments |