SLUUCY8 December   2023 BQ77307

 

  1.   1
  2.   Read This First
    1.     About This Manual
    2.     Battery Notational Conventions
    3.     Trademarks
    4.     Glossary
  3. 1 Introduction
  4. 2 Device Description
    1. 2.1 Overview
    2. 2.2 Functional Block Diagram
  5. 3 Device Configuration
    1. 3.1 Direct Commands and Subcommands
    2. 3.2 Configuration Using OTP or Registers
    3. 3.3 Data Formats
      1. 3.3.1 Unsigned Integer
      2. 3.3.2 Integer
      3. 3.3.3 Hex
  6. 4 Device Security
  7. 5 Protection Subsystem
    1. 5.1  Protections Overview
    2. 5.2  Protection Evaluation and Detection
    3. 5.3  Protection FET Drivers
    4. 5.4  Cell Overvoltage Protection
    5. 5.5  Cell Undervoltage Protection
    6. 5.6  Short Circuit in Discharge Protection
    7. 5.7  Overcurrent in Charge Protection
    8. 5.8  Overcurrent in Discharge 1 and 2 Protections
    9. 5.9  Current Protection Latch
    10. 5.10 CHG Detector
    11. 5.11 Overtemperature in Charge Protection
    12. 5.12 Overtemperature in Discharge Protection
    13. 5.13 Internal Overtemperature Protection
    14. 5.14 Undertemperature in Charge Protection
    15. 5.15 Undertemperature in Discharge Protection
    16. 5.16 Cell Open Wire Detection
    17. 5.17 Voltage Reference Diagnostic Protection
    18. 5.18 VSS Diagnostic Protection
    19. 5.19 REGOUT Diagnostic Protection
    20. 5.20 LFO Oscillator Integrity Diagnostic Protection
    21. 5.21 Internal Factory Trim Diagnostic Protection
  8. 6 Device Status and Controls
    1. 6.1 0x00 Control Status() and 0x12 Battery Status() Commands
    2. 6.2 Unused VC Cell Input Pins
    3. 6.3 LDOs
    4. 6.4 ALERT Pin Operation
    5. 6.5 TS Pin Operation
    6. 6.6 Device Event Timing
  9. 7 Operational Modes
    1. 7.1 Overview of Operational Modes
    2. 7.2 NORMAL Mode
    3. 7.3 SHUTDOWN Mode
    4. 7.4 CONFIG_UPDATE Mode
  10. 8 I2C Serial Communications
    1. 8.1 I2C Serial Communications Interface
  11. 9 Commands and Subcommands
    1. 9.1 Direct Commands
    2. 9.2 Bit Field Definitions for Direct Commands
      1. 9.2.1  Safety Alert A Register
      2. 9.2.2  Safety Status A Register
      3. 9.2.3  Safety Alert B Register
      4. 9.2.4  Safety Status B Register
      5. 9.2.5  Battery Status Register
      6. 9.2.6  Alarm Status Register
      7. 9.2.7  Alarm Raw Status Register
      8. 9.2.8  Alarm Enable Register
      9. 9.2.9  FET CONTROL Register
      10. 9.2.10 REGOUT CONTROL Register
    3. 9.3 Command-only Subcommands
    4. 9.4 Subcommands with Data
    5. 9.5 Bitfield Definitions for Subcommands
      1. 9.5.1 DEVICE NUMBER Register
      2. 9.5.2 FW VERSION Register
      3. 9.5.3 HW VERSION Register
      4. 9.5.4 SECURITY KEYS Register
      5. 9.5.5 PROT RECOVERY Register
  12. 10Data Memory
    1. 10.1 Settings
      1. 10.1.1 Settings:Configuration
        1. 10.1.1.1  Settings:Configuration:Reserved
        2. 10.1.1.2  Settings:Configuration:Power Config
        3. 10.1.1.3  Settings:Configuration:REGOUT Config
        4. 10.1.1.4  Settings:Configuration:I2C Address
        5. 10.1.1.5  Settings:Configuration:I2C Config
        6. 10.1.1.6  Settings:Configuration:TS Mode
        7. 10.1.1.7  Settings:Configuration:Vcell Mode
        8. 10.1.1.8  Settings:Configuration:Default Alarm Mask
        9. 10.1.1.9  Settings:Configuration:FET Options
        10. 10.1.1.10 Settings:Configuration:Charge Detector Time
      2. 10.1.2 Settings:Protection
        1. 10.1.2.1 Settings:Protection:Enabled Protections A
        2. 10.1.2.2 Settings:Protection:Enabled Protections B
        3. 10.1.2.3 Settings:Protection:DSG FET Protections A
        4. 10.1.2.4 Settings:Protection:CHG FET Protections A
        5. 10.1.2.5 Settings:Protection:Both FET Protections B
        6. 10.1.2.6 Settings:Protection:Cell Open Wire Check Time
    2. 10.2 Protections
      1. 10.2.1 Protections:Cell Voltage
        1. 10.2.1.1 Protections:Cell Voltage:Cell Undervoltage Protection Threshold
        2. 10.2.1.2 Protections:Cell Voltage:Cell Undervoltage Protection Delay
        3. 10.2.1.3 Protections:Cell Voltage:Cell Undervoltage Protection Recovery Hysteresis
        4. 10.2.1.4 Protections:Cell Voltage:Cell Overvoltage Protection Threshold
        5. 10.2.1.5 Protections:Cell Voltage:Cell Overvoltage Protection Delay
        6. 10.2.1.6 Protections:Cell Voltage:Cell Overvoltage Protection Recovery Hysteresis
      2. 10.2.2 Protections:Current
        1. 10.2.2.1  Protections:Current:Overcurrent in Charge Protection Threshold
        2. 10.2.2.2  Protections:Current:Overcurrent in Charge Protection Delay
        3. 10.2.2.3  Protections:Current:Overcurrent in Discharge 1 Protection Threshold
        4. 10.2.2.4  Protections:Current:Overcurrent in Discharge 1 Protection Delay
        5. 10.2.2.5  Protections:Current:Overcurrent in Discharge 2 Protection Threshold
        6. 10.2.2.6  Protections:Current:Overcurrent in Discharge 2 Protection Delay
        7. 10.2.2.7  Protections:Current:Short Circuit in Discharge Protection Threshold
        8. 10.2.2.8  Protections:Current:Short Circuit in Discharge Protection Delay
        9. 10.2.2.9  Protections:Current:Latch Limit
        10. 10.2.2.10 Protections:Current:Recovery Time
      3. 10.2.3 Protections:Temperature
        1. 10.2.3.1  Protections:Temperature:Overtemperature in Charge Protection Threshold
        2. 10.2.3.2  Protections:Temperature:Overtemperature in Charge Protection Delay
        3. 10.2.3.3  Protections:Temperature:Overtemperature in Charge Protection Recovery
        4. 10.2.3.4  Protections:Temperature:Undertemperature in Charge Protection Threshold
        5. 10.2.3.5  Protections:Temperature:Undertemperature in Charge Protection Delay
        6. 10.2.3.6  Protections:Temperature:Undertemperature in Charge Protection Recovery
        7. 10.2.3.7  Protections:Temperature:Overtemperature in Discharge Protection Threshold
        8. 10.2.3.8  Protections:Temperature:Overtemperature in Discharge Protection Delay
        9. 10.2.3.9  Protections:Temperature:Overtemperature in Discharge Protection Recovery
        10. 10.2.3.10 Protections:Temperature:Undertemperature in Discharge Protection Threshold
        11. 10.2.3.11 Protections:Temperature:Undertemperature in Discharge Protection Delay
        12. 10.2.3.12 Protections:Temperature:Undertemperature in Discharge Protection Recovery
        13. 10.2.3.13 Protections:Temperature:Internal Overtemperature Protection Threshold
        14. 10.2.3.14 Protections:Temperature:Internal Overtemperature Protection Delay
        15. 10.2.3.15 Protections:Temperature:Internal Overtemperature Protection Recovery
    3. 10.3 Power
      1. 10.3.1 Power:Configuration
        1. 10.3.1.1 Power:Configuration:Voltage CHECK Time
        2. 10.3.1.2 Power:Configuration:Body Diode Threshold
      2. 10.3.2 Power:Shutdown
        1. 10.3.2.1 Power:Shutdown:Shutdown Cell Voltage
        2. 10.3.2.2 Power:Shutdown:Shutdown Stack Voltage
        3. 10.3.2.3 Power:Shutdown:Shutdown Temperature
    4. 10.4 Security
      1. 10.4.1 Security:Settings
        1. 10.4.1.1 Security:Settings:Security Settings
        2. 10.4.1.2 Security:Settings:Full Access Key Step 1
        3. 10.4.1.3 Security:Settings:Full Access Key Step 2
      2. 10.4.2 Data Memory Summary
  13. 11Revision History

10.2.2.9 Protections:Current:Latch Limit

ClassSubclassNameTypeMinMaxDefaultUnit
ProtectionsCurrentLatch LimitH10x000x070x0Varying
76543210
RSVD0_4RSVD0_3RSVD0_2RSVD0_1RSVD0_0CURRLAT_2CURRLAT_1CURRLAT_0

Description: This parameter configures the number of retries for recovery of the SCD, OCD1, OCD2, or OCC before the FETs are latched as disabled.

Table 10-19 Latch Limit Register Field Descriptions
BitFieldDefaultDescription
2–0CURRLAT_2–CURRLAT_00This parameter configures the number of retries for recovery of the SCD, OCD1, OCD2, or OCC before the FETs are latched as disabled. If the protection does not retrigger within 5 seconds after a recovery, the counter is reset to 0.

0 = Latching is disabled

1 = 2 retries before FETs are latched disabled

2 = 4 retries before FETs are latched disabled

3 = 8 retries before FETs are latched disabled

4 = 16 retries before FETs are latched disabled

5 = 32 retries before FETs are latched disabled

6 = 48 retries before FETs are latched disabled

7 = 96 retries before FETs are latched disabled