SLVA528D September   2012  – August 2021 TPS65381-Q1 , TPS65381A-Q1

 

  1.   Trademarks
  2. 1Introduction
  3. 2Product Overview
    1. 2.1 Safety Functions and Diagnostics Overview
    2. 2.2 Target Applications
    3. 2.3 Product Safety Constraints
  4. 3Development Process for Management of Systematic Faults
    1. 3.1 TI New-Product Development Process
  5. 4TPS65381x-Q1 Product Architecture for Management of Random Faults
    1. 4.1 Device Operating States
    2.     Device Operating States (continued)
    3. 4.2 NRES (MCU Reset) Driver and ENDRV (SAFING Path Enable) Driver
  6. 5TPS65381x-Q1 Architecture Safety Mechanisms and Assumptions of Use
    1. 5.1 Power Supply
    2. 5.2 Regulated Supplies
      1. 5.2.1 VDD6 Buck Switch-Mode Supply
      2. 5.2.2 VDD5 Linear Supply
      3. 5.2.3 VDD3/5 Linear Supply
      4. 5.2.4 VDD1 Linear Supply
      5. 5.2.5 VSOUT1 Linear Supply
      6. 5.2.6 Charge Pump
    3. 5.3 Diagnostic, Monitoring, and Protection Functions
      1. 5.3.1 External MCU Fault Detection and Management
        1. 5.3.1.1 External MCU Error Signal Monitor (MCU ESM)
        2. 5.3.1.2 Watchdog Timer
      2. 5.3.2 Voltage Monitor (VMON)
      3. 5.3.3 Loss-of-Clock Monitor (LCMON)
      4. 5.3.4 Junction Temperature Monitoring and Current Limiting
      5. 5.3.5 Analog and Digital MUX (AMUX and DMUX) and Diagnostic Output Pin (DIAG_OUT)
      6. 5.3.6 Analog Built-In Self-Test (ABIST)
      7. 5.3.7 Logic Built-In Self-Test (LBIST)
      8. 5.3.8 Device Configuration Register Protection
  7. 6Application Diagrams
    1. 6.1 TPS65381x-Q1 With TMS570
    2. 6.2 TPS65381x-Q1 With C2000
    3. 6.3 TPS65381x-Q1 With TMS470
  8. 7TPS65381x-Q1 as Safety Element out of Context (SEooC)
    1. 7.1 TPS65381x-Q1 Used in an EV/HEV Inverter System
    2. 7.2 SPI Note
  9. 8Revision History

5.2.6 Charge Pump

The charge-pump overdrive voltage can be used to drive the gate of an external NMOS power FET acting as reverse-battery protection. Such reverse-battery protection allows for a lower minimum battery voltage operation compared to a traditional reverse-battery blocking diode.