The purpose of this study was to characterize the single-event effect (SEE) performance due to heavy-ion irradiation of the TPS7H2201-SP. Heavy-ions were used to irradiate six devices in 14 runs with a flux of approximately 105 ions / cm2 × s and fluence of approximately 107 ions / cm2. The results demonstrate that the TPS7H2201-SP is SEL, SEB, SEGR, SET, and SEFI free up to LETEFF = 75 MeV·cm2/mg (at 125°C for SEL and 25°C for SET, SEB, SEGR, and SEFI), and across the full electrical specifications. This report uses the QMLV TPS7H2201-SP device in a ceramic package. It is also applicable for the QMLP TPS7H2201-SP device in a plastic package which uses the same die as the QMLV device.
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The TPS7H2201-SP is a space grade, radiation-hardened, 1.5 to 7 V, 6 A ,e-fuse. The device contains a P-channel MOSFET as the switch element. The device supports a maximum of six amps of continuous current and provides a programmable current limit pin and fast current trip for overcurrent load protection. Additional features of the device include the following:
The device is offered in a thermally enhanced 16-pin ceramic, dual in-line flat-pack package. Table 1-1 lists the general device information and test conditions. See the TPS7H2201-SP product page for more detailed technical specifications, user guides, and applications notes.
| Description | Device Information |
|---|---|
| TI Part Number | TPS7H2201-SP |
| SMD Number | 5962R1722001VXC |
| Device Function | eFuse |
| Technology | 250 nm Linear BiCMOS 7 |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Heavy Ion Fluence per Run | ≥ 1 x 107 ions / cm2 |
| Irradiation Temperature | 25°C and 125°C (for SEL testing) |