SLVAE32B August   2018  – December 2023 TPS7H2201-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Device Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Depth, Range, and LETEFF Calculation
  8. 5 Irradiation Facility and Setup
  9. 6 Test Setup and Procedures
  10. 7 Single-Event-Latchup (SEL), Single-Event-Burnout (SEB), and Single-Event-Gate-Rupture (SEGR)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR)
  11. 8 Single Event Transient (SET)
  12. 9 Total Ionizing Dose From SEE Experiments
  13. 10Orbital Environment Estimations
  14. 11Confidence Interval Calculations
    1. 11.1 Rate Orbit Calculation
  15. 12Summary
  16. 13References
  17. 14Revision History

12 Summary

The purpose of this report is to summarize the TPS7H2201-SP heavy-ions SEE performance. The data shows that the TPS7H2201-SP is SEL free at VIN = 7 V, 6 A , T = 125°C, and LETEFF= 75 MeV × cm2 / mg. The data also shows that the device is SEB/SEGR free at VIN = 7 V, 6 A, T = 20–25°C and LETEFF = 75 MeV-cm2 / mg. The TPS7H2201-SP shows to be SET-free for all electrical conditions at room temperature. Worst case transient observed when the die temperature was 125°C is presented.