SLVAE32B August 2018 – December 2023 TPS7H2201-SP
All SEL characterizations were performed with die temperature of 125°C. The device was heated by connecting three parallel power resistors (model: RP60800R0100JNBK) attached with thermal paste to the back of the board. The temperature was monitored by attaching a K-type thermocouple to the thermal pad of the device on the top layer. Thermocouple and die correlation was verified by using a thermal IR camera, prior to reach to the heavy-ions facility (TAMU).
The device was exposed to a Praseodymium (Pr) heavy-ion beam incident on the die surface at 0° and 27.3° for an LETEFF of 66.43 and 75 MeV-cm2 / mg, respectively. Flux of approximately 105 ions / cm2 × s and fluence ≥ 107 ions / cm2 was used in each run. Run duration to achieve this fluence was approximately two minutes (for 107 ions / cm2). During the SEL testing, the device was set up as described in Figure 3-3. Table 7-1 summarizes the SEL results. No SEL events were observed under any of the test runs, indicating that the TPS7H2201-SP is SEL-immune at T = 125°C and LET = 75 MeV·cm2 / mg. SEL cross-section was calculated based on 0 events observed using a 95% (2σ) confidence interval (see Section 11 for discussion of cross-section calculation method). Figure 7-1 shows a typical current plot.
Run Number | Unit Number | Temperature (°C) | Ion Type | Angle of Incidence (°) | LETEFF (MeV × cm² / mg) | Flux (ions / cm² × s) | Fluence (ions / cm²) | VIN (V) | Load (A) | SEL Events |
---|---|---|---|---|---|---|---|---|---|---|
1 | 1 | 125 | Pr | 27.3 | 75 | 1.07 × 105 | 2 × 107 | 7 | 6 | 0 |
2 | 1 | 125 | Pr | 0 | 66.43 | 1.14 × 105 | 9.95 × 106 | 7 | 6 | 0 |