SLVAE32B August   2018  – December 2023 TPS7H2201-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Device Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Depth, Range, and LETEFF Calculation
  8. 5 Irradiation Facility and Setup
  9. 6 Test Setup and Procedures
  10. 7 Single-Event-Latchup (SEL), Single-Event-Burnout (SEB), and Single-Event-Gate-Rupture (SEGR)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR)
  11. 8 Single Event Transient (SET)
  12. 9 Total Ionizing Dose From SEE Experiments
  13. 10Orbital Environment Estimations
  14. 11Confidence Interval Calculations
    1. 11.1 Rate Orbit Calculation
  15. 12Summary
  16. 13References
  17. 14Revision History

8 Single Event Transient (SET)

SET testing was performed at room temperature, with141Pr with an angle of incidence of 27.3° die for a LETEFF 75 MeV × cm2/ mg. The VIN was set to maximum (7-V) and minimum (1.5-V) recommended voltages at maximum load of 6-A and no load. Under these conditions, the die temperature is around 33 °C when loaded to 6-A and 23°C when not loaded. Flux of approximately 105 ions /cm2× s and fluence ≥ 1× 107 ions / cm2 were used in each run. The device was also evaluated when the DUT was disabled by using the EN (0-V) and the OVP (1-V) pins by forcing an external voltage into the pins. Not a single upset on Vout or SS was observed during the SET testing at room temperature. A window trigger with ±3% around the output nominal voltage (when the device was enabled) and a ±200 mV (when the device was disabled) was used for the detection of upsets during the characterization.

During the SEL testing, when the device was exposed to a die temperature of 125°C, upsets that create a momentary Soft Start (SS) cycle were observed. Table 8-1 lists the test conditions and results for the SET testing of the TPS7H2201-SP. Worst case observed transient (SET) for VOUT and SS is shown in Figure 8-1.

The SET cross-section was calculated observed 95% (2σ) confidence interval and combining (or summing) fluences (see Section 11 for discussion of confidence limits). The cross section is classified by die temperature and LETEFF.

Equation 3. σ S E T ≤ 2 . 29 × 10 - 8 c m 2 / d e v i c e   f o r   L E T E F F = 75 M e V × c m 2 / m g   a n d   T J = 33 ° C ,   95 %   c o n f .
Equation 4. σ S E T ≤ 2 . 18 × 10 - 5 c m 2 / d e v i c e   f o r   L E T E F F = 75 M e V × c m 2 / m g   a n d   T J = 125 ° C ,   95 %   c o n f .
Equation 5. σ S E T ≤ 1 . 17 × 10 - 6 c m 2 / d e v i c e   f o r   L E T E F F = 66.43 M e V × c m 2 / m g   a n d   T J = 125 ° C ,   95 %   c o n f .
Table 8-1 Summary of TPS7H2201-SP SET Results With T = Approximately 25°C and 125°C
Run NumberUnit NumberTemperature (°C)Ion TypeAngle of Incidence (°)LETEFF (MeV × cm² / mg)Flux (ions / cm² × s)Fluence (ions / cm2)VIN (V)LoadEnabled?SET Events
8333Pr27.3759.94 × 1042 × 10776Yes0
9333Pr27.3759.97 × 1042 × 10770Yes0
10433Pr27.3751.01 × 1052 × 1071.56Yes0
11433Pr27.3751.09 × 1052 × 1071.50Yes0
12333Pr27.3751.04 × 1052 × 10776No0
13533Pr27.3757.99 × 1041.36 × 10776No0
14533Pr27.3758.53 × 1041 × 1071.56No0
From SEL Runs
11125Pr27.3751.07 × 1052 × 10776Yes396
21125Pr066.431.14 × 1059.96 × 10676Yes5
GUID-E11C8FE9-4550-4F8D-BB56-13A5050173B0-low.gif Figure 8-1 Worst Case Overlay of VOUT and SS SET for Run 1 at LETEFF 75 MeV × cm2 / mg and T = 125°C