SLVAEV2 June 2020 DRV8873-Q1
4.2 DRV8873S-Q1 (SPI variant)
Figure 4-2 shows the DRV8873S-Q1 pin diagram. For a detailed description of the device pins please refer to the 'Pin Configuration and Functions' section in the DRV8873-Q1 datasheet.
Figure 4-2 DRV8873S-Q1 Pin DiagramFollowing are the assumptions of use and the device configuration assumed for the pin FMA in this section:
- The device is used with external components consistent with the values described in the external component table of the datasheet.
Table 4-6 SPI variant - Pin FMA for Device Pins Short-Circuited to Ground
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
| DVDD | 1 | Device will not power on (OUTx remain HiZ) with higher current draw from VM | A |
| nFAULT | 2 | Device will always be signaling fault | B |
| SDO | 3 | SPI read function will be non-functional | B |
| SDI | 4 | SPI read write functions will be non-functional | B |
| SCLK | 5 | SPI read write functions will be non-functional | B |
| nSCS | 6 | SPI read write functions will be non-functional | B |
| EN/IN1 | 7 | OUTx driver control will be lost | B |
| PH/IN2 | 8 | OUTx driver control will be lost | B |
| DISABLE | 9 | OUTx driver control will be lost | B |
| IPROPI1 | 10 | Current sensing capability will be lost | B |
| nSLEEP | 11 | Device will be in sleep state with OUTx HiZ | B |
| IPROPI2 | 12 | Current sensing capability will be lost | B |
| VM | 13 | Device will not power up | B |
| OUT2 | 14 | OUTx HiZ, with device signaling fault | B |
| OUT2 | 15 | OUTx HiZ, with device signaling fault | B |
| SRC | 16 | Intended operation | D |
| SRC | 17 | Intended operation | D |
| OUT1 | 18 | OUTx HiZ, with device signaling fault | B |
| OUT1 | 19 | OUTx HiZ, with device signaling fault | B |
| VM | 20 | Device will not power up | B |
| VCP | 21 | Device will be damaged with higher current draw from VM | A |
| CPH | 22 | Device will be damaged with higher current draw from VM | A |
| CPL | 23 | Device will be damaged with higher current draw from VM | A |
| GND | 24 | Intended operation | D |
Table 4-7 SPI variant - Pin FMA for Device Pins Open-Circuited
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
| DVDD | 1 | Internal regulator will become unstable | A |
| nFAULT | 2 | Fault signaling will be lost | B |
| SDO | 3 | SPI read function will be non-functional | B |
| SDI | 4 | SPI read write functions will be non-functional | B |
| SCLK | 5 | SPI read write functions will be non-functional | B |
| nSCS | 6 | SPI read write functions will be non-functional | B |
| EN/IN1 | 7 | OUTx driver control will be lost | B |
| PH/IN2 | 8 | OUTx driver control will be lost | B |
| DISABLE | 9 | OUTx driver control will be lost | B |
| IPROPI1 | 10 | Current sensing capability will be lost | B |
| nSLEEP | 11 | Device will be in sleep state with OUTx HiZ | B |
| IPROPI2 | 12 | Current sensing capability will be lost | B |
| VM | 13 | Device will not power up | B |
| OUT2 | 14 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| OUT2 | 15 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| SRC | 16 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| SRC | 17 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| OUT1 | 18 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| OUT1 | 19 | OUTx impedance will be higher - device will not be able to drive the load properly | B |
| VM | 20 | Device will not power up | B |
| VCP | 21 | OUTx HiZ, with device signaling fault | B |
| CPH | 22 | OUTx HiZ, with device signaling fault | B |
| CPL | 23 | OUTx HiZ, with device signaling fault | B |
| GND | 24 | Device will not power up | B |
Table 4-8 SPI variant - Pin FMA for Device Pins Shorted to Adjacent Pin
| Pin Name | Pin No. | Shorted to Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|---|
| DVDD | 1 | 2 | Device will reset whenever nFAULT is asserted low | B |
| nFAULT | 2 | 3 | SPI read write functions and fault signaling will not work | B |
| SDO | 3 | 4 | SPI read write functions will be non-functional | B |
| SDI | 4 | 5 | SPI read write functions will be non-functional | B |
| SCLK | 5 | 6 | SPI read write functions will be non-functional | B |
| nSCS | 6 | 7 | SPI read write functions will be non-functional | B |
| EN/IN1 | 7 | 8 | OUTx driver control will be lost | B |
| PH/IN2 | 8 | 9 | OUTx driver control will be lost | B |
| DISABLE | 9 | 10 | OUTx driver control and load current sensing will be lost | B |
| IPROPI1 | 10 | 11 | Current sensing capability will be lost | B |
| nSLEEP | 11 | 12 | Current sensing capability will be lost | B |
| IPROPI2 | 12 | 13 | Device will be damaged with higher current draw from VM | A |
| VM | 13 | 14 | OUTx HiZ with device signaling fault | B |
| OUT2 | 14 | 15 | Intended operation | D |
| OUT2 | 15 | 16 | OUTx HiZ, with device signaling fault | B |
| SRC | 16 | 17 | Intended operation | D |
| SRC | 17 | 18 | OUTx HiZ, with device signaling fault | B |
| OUT1 | 18 | 19 | Intended operation | D |
| OUT1 | 19 | 20 | OUTx HiZ with device signaling fault | B |
| VM | 20 | 21 | OUTx HiZ with device signaling fault | B |
| VCP | 21 | 22 | Device will be damaged with higher current draw from VM | A |
| CPH | 22 | 23 | Device will be damaged with higher current draw from VM | A |
| CPL | 23 | 24 | Device will be damaged with higher current draw from VM | A |
Table 4-9 SPI variant - Pin FMA for Device Pins Shorted to VM (High Voltage Supply)
| Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
|---|---|---|---|
| DVDD | 1 | Device will be damaged with higher current draw from VM | A |
| nFAULT | 2 | Device will be damaged with higher current draw from VM | A |
| SDO | 3 | Device will be damaged with higher current draw from VM | A |
| SDI | 4 | Device will be damaged with higher current draw from VM | A |
| SCLK | 5 | Device will be damaged with higher current draw from VM | A |
| nSCS | 6 | Device will be damaged with higher current draw from VM | A |
| EN/IN1 | 7 | Device will be damaged with higher current draw from VM | A |
| PH/IN2 | 8 | Device will be damaged with higher current draw from VM | A |
| DISABLE | 9 | Device will be damaged with higher current draw from VM | A |
| IPROPI1 | 10 | Device will be damaged with higher current draw from VM | A |
| nSLEEP | 11 | Device will be damaged with higher current draw from VM | A |
| IPROPI2 | 12 | Device will be damaged with higher current draw from VM | A |
| VM | 13 | Intended operation | D |
| OUT2 | 14 | OUTx HiZ with device signaling fault | B |
| OUT2 | 15 | OUTx HiZ with device signaling fault | B |
| SRC | 16 | Device will not power up | B |
| SRC | 17 | Device will not power up | B |
| OUT1 | 18 | OUTx HiZ with device signaling fault | B |
| OUT1 | 19 | OUTx HiZ with device signaling fault | B |
| VM | 20 | Intended operation | D |
| VCP | 21 | OUTx HiZ with device signaling fault | B |
| CPH | 22 | Device will be damaged with higher current draw from VM | A |
| CPL | 23 | Device will be damaged with higher current draw from VM | A |
| GND | 24 | Device will not power up | B |