The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H2221-SEP. SEE performance was verified at an input voltage range of 1.6-V to 5.5-V. Heavy-ions with LETEFF of 42.7 and 46.8 MeV·cm2/mg were used to irradiate 6 production devices. Flux of ≈105 ions/cm2·s and fluences of ≈107 ions/cm2 per run were used for the DSEE characterization and flux of ≈104 or 105 ions/cm2·s and fluences of ≈3 x 106 or 107 for the SET testing. The results demonstrated that the TPS7H2221-SEP is single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) -free up to 46.8 MeV·cm2/mg, at T = 125°C and T = 25°C, respectively, and across the full electrical specifications. Single event transient (SET) performance for output voltage excursions ≥ |3%| from the nominal voltage are discussed.
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The TPS7H2221-SEP is a space-enhanced-plastic, 1.6-V to 5.5-V input, 1.25-A, load switch with a controlled slew rate. A controllable ON state is controlled by digital input that is capable of interfacting directly with low-voltage control signals.
The device is offered in a SC-70 package characterized for a temperature range of -55°C to 125°C. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user-guides, and application notes please go to TPS7H2221-SEP product page.
DESCRIPTION(1) | DEVICE INFORMATION |
---|---|
TI Part Number | TPS7H2221-SEP |
Orderable Number | TPS7H2221MRGWSEP |
Device Function | Load Switch |
Technology | Linear BiCMOS 9 (LBC9) |
Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 and 25 MeV/nucleon) |
Heavy Ion Fluence per Run | 3.00 × 106 and 1 × 107 ions/cm2 |
Irradiation Temperature | 25°C (for SEB/SEGR and SET testing), and 125°C (for SEL testing) |
The primary concern for the TPS7H2221-SEP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR). In mixed technologies such as the BiCMOS process used on the TPS7H2221-SEP, the CMOS circuitry introduces a potential for SEL susceptibility.
SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1,2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The TPS7H2221-SEP was tested for SEL at a maximum recommended input voltage of 5.5-V and a load of 1.25-A. Testing was done with a discrete power resistor of 4.4 Ω or a Chroma E63600 ELoad in Constant Resistance (CR) mode. During the SEL testing a Closed-Loop PID controlled heat gun (MISTRAL 6 System (120V, 2400W)) was used to heat the device to 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to ensure the device was being accurately heated. The device exhibited no SEL with heavy-ions with up to LETEFF = 46.8 MeV·cm2/mg, flux ≈105 ions/cm2·s and fluences of ≈107 ions/cm2.
The TPS7H2221-SEP was evaluated for SEB/SEGR at a load of 1.25-A and an input voltage of 5.5-V. The device was tested under enabled and disabled modes. During the SEB/SEGR testing, not a single current event was observed, demonstrating that the TPS7H2221-SEP is SEB/SEGR-free up to LETEFF = 46.8 MeV·cm2/mg at a flux of ≈105 ions/cm2·s, fluences of ≈107 ions/cm2, and a die temperature of ≈25°C.
The TPS7H2221-SEP was characterized for SET at flux of ≈104 or 105 ions/cm2·s, fluences of ≈3 x 106 or 107 ions/cm2, and a die temperature of about 25°C. The device was characterized at VIN = 1.8-V, 3.3-V, and 5-V with varying loads of 100-mA to 1.25-A. Under these conditions all recorded VOUT voltage excursions self-recover with no external intervention.