SLVK117 October   2022 TPS7H2221-SEP

 

  1.   Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch
  2.   Trademarks
  3. Introduction
  4. Single-Event Effects (SEE)
  5. Device and Test Board Information
  6. Irradiation Facility and Setup
  7. Depth, Range and LETEFF Calculation
  8. Test Setup and Procedures
  9. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. Single-Event Transients (SET) and Single Event Functional Interrupt (SEFI)
    1. 8.1 Single Event Transient (SET)
    2. 8.2 Single Event Functional Interrupt (SEFI)
  11. Event Rate Calculations
  12. 10Summary
  13.   A Appendix: Total Ionizing Dose from SEE Experiments
  14.   B Appendix: References

Introduction

The TPS7H2221-SEP is a space-enhanced-plastic, 1.6-V to 5.5-V input, 1.25-A, load switch with a controlled slew rate. A controllable ON state is controlled by digital input that is capable of interfacting directly with low-voltage control signals.

The device is offered in a SC-70 package characterized for a temperature range of -55°C to 125°C. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user-guides, and application notes please go to TPS7H2221-SEP product page.

Table 1-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberTPS7H2221-SEP
Orderable NumberTPS7H2221MRGWSEP
Device FunctionLoad Switch
Technology

Linear BiCMOS 9 (LBC9)

Exposure FacilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (15 and 25 MeV/nucleon)
Heavy Ion Fluence per Run3.00 × 106 and 1 × 107 ions/cm2
Irradiation Temperature25°C (for SEB/SEGR and SET testing),
and 125°C (for SEL testing)
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