SLVK117 October   2022 TPS7H2221-SEP

 

  1.   Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch
  2.   Trademarks
  3. 1 Introduction
  4. 2 Single-Event Effects (SEE)
  5. 3 Device and Test Board Information
  6. 4 Irradiation Facility and Setup
  7. 5 Depth, Range and LETEFF Calculation
  8. 6 Test Setup and Procedures
  9. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. 8 Single-Event Transients (SET) and Single Event Functional Interrupt (SEFI)
    1. 8.1 Single Event Transient (SET)
    2. 8.2 Single Event Functional Interrupt (SEFI)
  11. 9 Event Rate Calculations
  12. 10Summary
  13.   A Appendix: Total Ionizing Dose from SEE Experiments
  14.   B Appendix: References

5 Depth, Range and LETEFF Calculation

Figure 5-1 Generalized Cross-Section of the LBC9 Technology BEOL Stack on the TPS7H2221-SEP [Left] and SEUSS 2021 Application Used to Determine Key Ion Parameters [Right]

The TPS7H2221-SP is fabricated in the TI LBC9 process with a back-end-of-line (BEOL) stack consisting of 3 levels of standard thickness aluminum metal on a 0.5-μm pitch. The total stack height from the surface of the passivation to the silicon surface is 5.57 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the TPS7H2221-SEP, the effective LET (LETEFF) at the surface of the silicon substrate, the depth, and the ion range was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Table 5-1. The LETEFF vs range for the heavy-ions used is shown on Figure 5-2. The stack was modeled as a homogeneous layer of silicon dioxide (valid since SiO2 and aluminum density are similar).

Table 5-1 Xenon Ion LETEFF, Depth, and Range in Silicon
ION TYPEANGLE OF INCIDENCEDEGRADER STEPS (#)DEGRADER ANGLERANGE IN SILICONLETEFF (MeV·cm2/mg)
129Xe000

214.2

42.7

109Ag

0

0

0

99.5

46.8

Figure 5-2 LETEFF vs Range for 129Xe and 109Ag at the Conditions Used for the SEE Test Campaign