SLVK146 august   2023 TPS7H2211-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H2211-SEP eFuse
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A
  15.   B References

1 Introduction

The TPS7H2211-SEP is a radiation tolerant, 4.5-V to 14-V input, 3.5-A, eFuse. The device provides reverse current protection, overvoltage protection, and a configurable rise time. The device contains a P-channel MOSFET which operates over the full input range and supports the maximum 3.5 A of continuous current. The switch is controlled through the active-high Enable (EN) input pin, which is capable of interfacing directly with low-voltage control signals.

Other protection features include thermal shutdown, internal current limiting (Fast Trip), and an overvoltage detection pin.

The device is offered in a 32-pin plastic package (HTSSOP). Table 1-1 lists general device information and test conditions. For more detailed technical specifications, user's guides, and application notes, see the TPS7H2211-SEP product page

Table 1-1 Overview Information
Description (1)Device Information
TI part numberTPS7H2211-SP
Orderable numberTPS7H2211MDAPTSEP
Device functionIntegrated single channel eFuse
Technology250-nm linear BiCMOS 7 (LBC7)
Exposure facilityRadiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon)
Heavy ion fluence per run≈ 1 × 107 ions/cm2
Irradiation temperature25°C (for SEB testing), 25°C (for SET testing), and 125°C (for SEL testing)
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