SLVK153 November   2023 TPS7H1111-SP

 

  1.   1
  2.   TPS7H1111-QMLP Total Ionizing Dose (TID)
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Data Sheet Electrical Parameters and Associated Tests
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report Data

1.2 Device Details

Table 1-1 lists the device information and test conditions used in the TID characterization.

Table 1-1 Device and Exposure Details
TID HDR and LDR Details
TI DeviceTPS7H1111-SP (QMLP)
TI Part Name5962R2120302PYE
Device FunctionLow Dropout Linear Regulator
Package28-pin HTSSOP (PWP)
TechnologyLBC7 (Linear BiCMOS 7)
Assembly Lot Number3371592ML3
Quantity Tested
  • HDR:
    • Five units biased and five units unbiased at 3krad(Si)
    • Five units biased and five units unbiased at 10krad(Si)
    • Five units biased and five units unbiased at 30krad(Si)
    • Five units biased and five units unbiased at 50krad(Si)
    • Five units biased and five units unbiased at 100krad(Si)
    • Two correlation units
HDR Dose rate194.5 rad(Si) / s ioinizing radiation with increments(1)
HDR Radiation FacilityTexas Instruments, Dallas, Texas
Irradiation and Test TemperatureAmbient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750.
GUID-20231025-SS0I-MMG7-DLD9-FMQJDQLDL1FB-low.jpg Figure 1-1 TPS7H1111-QMLP Device (Front)
GUID-20231025-SS0I-Z7XM-FPQ0-941HTVVZVSN9-low.jpg Figure 1-2 TPS7H1111-QMLP Device (Back)
1. 100krad biased and unbiased devices were annealed for 1 week at room temperature with their respective bias conditions resulting in an effective dose rate of 165mrad(Si)/s.