SLVK158A November   2023  – June 2024 TPS7H6003-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References
  15.   B Revision History

1 Introduction

The TPS7H60X3-SP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:

  • Absolute Maximum Voltage ratings
    • TPS7H6003-SP: 200V
    • TPS7H6013-SP: 60V
    • TPS7H6023-SP: 22V
  • Adjustable dead time (PWM mode)
  • Approximately 30ns propagation delay
  • Approximately 5.5ns high-side and low-side matching
  • High-side and low-side 5V LDOs independent of supply voltage
  • Two control input modes: Independent Input Mode (IIM) and PWM
    • IIM allows for outputs to be controlled by dedicated input
    • PWM allows for two complementary outputs signals to be generated from single input with resistor programmable dead-time

In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.

The device is offered in a 48-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6003-SP, the TPS7H6013-SP, or the TPS7H6023-SP product pages.

Table 1-1 Overview Information
Description(1) Device Information
TI part number TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP
Orderable number 5962R2220101VXC, 5962R2220102VXC, 5962R2220103VXC
Device function 200, 60, or 22V half-bridge eGaN gate driver
Technology LBC7 (Linear BiCMOS 7)
Exposure facility Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon)
Heavy ion fluence per run 9.97 × 106 – 1 × 107 ions / cm2
Irradiation temperature 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.